The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

We have calculated the thermal boundary resistance at the GaN/SiC, GaN/sapphire and GaN/AlN interfaces in the diffuse mismatch approximation. The obtained values were then used to examine the effect of the thermal boundary resistance on heat diffusion in AlGaN/GaN heterostructure field-effect transistors. The results show that the thermal boundary resistance at the device layer interfaces can strongly influence the temperature rise in the device channel.

[1]  Lester F. Eastman,et al.  Undoped AlGaN/GaN HEMTs for microwave power amplification , 2001 .

[2]  S. M. Lee,et al.  Thermal boundary resistance at Ge2Sb2Te5/ZnS:SiO2 interface , 2000 .

[3]  M. Shur,et al.  Self-heating in high-power AlGaN-GaN HFETs , 1998, IEEE Electron Device Letters.

[4]  Alexander A. Balandin,et al.  Thermal conductivity of GaN films: Effects of impurities and dislocations , 2002 .

[5]  Alexander A. Balandin,et al.  Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications , 1999 .

[6]  Alexander A. Balandin.  Gate-voltage dependence of low-frequency noise in GaN/AlGaN heterostructure field-effect transistors , 2000 .

[7]  M. Kuball,et al.  Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy , 2002, IEEE Electron Device Letters.

[8]  Paul S. Ho,et al.  Thermal conductivity and interfacial thermal resistance of polymeric low k films , 2001 .

[9]  K. Goodson,et al.  Thermal conduction normal to diamond‐silicon boundaries , 1995 .

[10]  Electric-field-induced heating and energy relaxation in GaN , 2003 .

[11]  A. Balandin,et al.  Effect of dislocations on thermal conductivity of GaN layers , 2001 .

[12]  V. Rao,et al.  Flicker noise in GaN/Al/sub 0.15/Ga/sub 0.85/N doped channel heterostructure field effect transistors , 1998, IEEE Electron Device Letters.

[13]  Andrew G. Glen,et al.  APPL , 2001 .

[14]  M. Shur,et al.  Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe , 2001 .

[15]  B. C. Daly,et al.  Optical pump-and-probe measurement of the thermal conductivity of nitride thin films , 2002 .

[16]  R. O. Pohl,et al.  Thermal resistance at interfaces , 1987 .

[17]  Brian Thibeault,et al.  GaN-Based FETs for Microwave Power Amplification , 1999 .