论文信息 - Comments on "Design Issues in CMOS Differential Oscillators"

Comments on "Design Issues in CMOS Differential Oscillators"

The phase noise difference reported in the above paper appears to have a topological cause, and a simple analysis shows that the difference is 6 dB under otherwise identical conditions.

HongMo Wang

[1] Y. Tsividis. Operation and modeling of the MOS transistor , 1987 .

[2] E. Klumperink,et al. Intrinsic 1/f device noise reduction and its effect on phase noise in CMOS ring oscillators , 1999, IEEE J. Solid State Circuits.

[3] A. Hajimiri,et al. Design issues in CMOS differential LC oscillators , 1999, IEEE J. Solid State Circuits.

[4] Y. Nemirovsky,et al. 1/ f noise reduction of metal‐oxide‐semiconductor transistors by cycling from inversion to accumulation , 1991 .

[5] Ali Hajimiri,et al. A general theory of phase noise in electrical oscillators , 1998 .