Error rate improvement of super-RENS random signal with the minimum mark length of 75nm in 405nm 0.85 NA system

We report the error rate improvement of super-resolution near field structure (Super-RENS) write-once read-many (WORM) disk at a blue laser optical system. (Laser wavelength 405nm, numerical aperture 0.85) We used a disk of which carrier level (CL) of 75nm is improved from -26.3 dBm to -19.0 dBm. We controlled the equalization (EQ) profile characteristics and used the adaptive 5 symbol write strategy and advanced high tap partial-response maximum likelihood (PRML) technique in order to improve the bit error rate (bER) characteristics of the super-RENS random signal. As a result, we obtained bER of 10-4 level with new signal processing techniques and bit error analysis process. This result shows high feasibility of super-RENS technology for practical use in the near future.

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