论文信息 - Schottky barrier diodes on 3C‐SiC

Schottky barrier diodes on 3C‐SiC

Schottky barrier contacts have been made on n‐type 3C‐SiC epitaxially grown by chemical vapor deposition, and their characteristics were studied by the capacitance and photoresponse measurements. By evaporating Au onto chemically etched surfaces of 3C‐SiC, good quality Schottky barrier junctions have been obtained. The barrier height determined by the capacitance measurements is 1.15 (±0.15) eV, while the height by the photoresponse measurements is 1.11 (±0.03) eV. These values are about a half of the energy band gap Eg at room temperature.

[1] E. Sakuma,et al. High‐temperature electrical properties of 3C‐SiC epitaxial layers grown by chemical vapor deposition , 1984 .

[2] J. A. Powell,et al. Silicon carbide, a high temperature semiconductor , 1983 .

[3] S. Ashok,et al. Evidence of space-charge-limited current in amorphous silicon Schottky diodes , 1980, IEEE Electron Device Letters.

[4] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[5] J. W. Faust,et al. Silicon Carbide—1973 , 1977 .

[6] S. H. Hagen. Surface‐Barrier Diodes on Silicon Carbide , 1968 .

[7] Carver A. Mead,et al. Metal-semiconductor surface barriers , 1966 .

[8] A. Rosengreen,et al. Growth and Properties of β‐SiC Single Crystals , 1966 .

[9] Carver A. Mead,et al. Fermi Level Position at Metal-Semiconductor Interfaces , 1964 .