论文信息 - Chemical reaction at the interface between polycrystalline Si electrodes and HfO2∕Si gate dielectrics by annealing in ultrahigh vacuum - 字舞流文

Chemical reaction at the interface between polycrystalline Si electrodes and HfO2∕Si gate dielectrics by annealing in ultrahigh vacuum

H. Kumigashira | Y. Sugita | M. Oshima | H. Takahashi | Zhi Liu | S. Toyoda | G. L. Liu | K. Usuda | J. Okabayashi