Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001)

[1]  A. Dommann,et al.  Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling , 2016 .

[2]  P. Altieri-Weimar,et al.  Reliability model of LED package regarding the fatigue behavior of gold wires , 2016, 2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).

[3]  H. Känel,et al.  Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates , 2016 .

[4]  Yunus Alapan,et al.  Micro- and nanodevices integrated with biomolecular probes. , 2015, Biotechnology advances.

[5]  E. Grilli,et al.  Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates , 2015, 1510.08614.

[6]  G. Capellini,et al.  Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si. , 2015, ACS applied materials & interfaces.

[7]  M. Guzzi,et al.  Ge Crystals on Si Show Their Light , 2014 .

[8]  M. Lagally,et al.  Strained-germanium nanostructures for infrared photonics. , 2014, ACS nano.

[9]  P. Niedermann,et al.  Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays , 2013 .

[10]  A. Dommann,et al.  Perfect crystals grown from imperfect interfaces , 2013, Scientific Reports.

[11]  Thomas Schroeder,et al.  High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain , 2012 .

[12]  Giovanni Isella,et al.  Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals , 2012, Science.

[13]  L. Jingchun,et al.  Growth of strained-Si material using low-temperature Si combined with ion implantation technology , 2010 .

[14]  K. Nakagawa,et al.  Ion dose, energy, and species dependencies of strain relaxation of SiGe buffer layers fabricated by ion implantation technique , 2010 .

[15]  G. Capellini,et al.  Strain relaxation in high Ge content SiGe layers deposited on Si , 2010 .

[16]  John E. Ayers,et al.  Compliant Substrates for Heteroepitaxial Semiconductor Devices: Theory, Experiment, and Current Directions , 2008 .

[17]  S. Sanguinetti,et al.  Phonon strain shift coefficients in Si1−xGex alloys , 2008 .

[18]  Yasuhiko Ishikawa,et al.  Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate , 2005 .

[19]  Hiroyasu Ishikawa,et al.  Effect of Various Interlayers on Epiwafer Bowing in AlGaN/GaN High-Electron-Mobility Transistor Structures , 2004 .

[20]  D. Paul Si/SiGe heterostructures: from material and physics to devices and circuits , 2004 .

[21]  E. Fitzgerald,et al.  Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates , 2003 .

[22]  Lionel C. Kimerling,et al.  Correlation between leakage current density and threading dislocation density in SiGe p-i-n diodes grown on relaxed graded buffer layers , 2001 .

[23]  Dimitri A. Antoniadis,et al.  High quality Ge on Si by epitaxial necking , 2000 .

[24]  Alex Dommann,et al.  Silicon epitaxy by low-energy plasma enhanced chemical vapor deposition , 1998 .

[25]  E. A. Fitzgerald,et al.  The effect of substrate growth area on misfit and threading dislocation densities in mismatched heterostructures , 1989 .

[26]  Yoshio Itoh,et al.  Defect reduction effects in GaAs on Si substrates by thermal annealing , 1988 .

[27]  A. Voigt,et al.  Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film , 2017 .