Directional etching of Si with perfect selectivity to SiO2 using an ultraclean electron cyclotron resonance plasma
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Tadahiro Ohmi | Hiroaki Uetake | Nobuo Mikoshiba | Tadashi Kawashima | Junichi Murota | Koichi Fukuda | Takashi Matsuura | T. Ohmi | K. Fukuda | T. Matsuura | J. Murota | N. Mikoshiba | Yoshihiro Yamashita | H. Uetake | T. Kawashima | Y. Yamashita
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