Self-powered active pixel sensors for ultra low-power applications

A novel approach of self-powered CMOS active pixel sensors (SPS) for ultra low-power applications is presented. The SPS architecture allows generation of electric power by employing a light sensitive device, located on the same silicon die as the active pixel sensor (APS). While providing the energy required for the pixel and signal readout circuit operation, the SPS enables power dissipation reduction from the conventional power supply. This makes the SPS architecture very useful in applications where ultra low-power is the main demand. A detailed analysis of the proposed structure is carried out, with respect to power dissipation requirements, sensor area and power generation efficiency, showing the advantages and drawbacks of the SPS architecture. An illustrative example of an SPS structure in a 0.35 /spl mu/m standard CMOS technology is discussed and a test chip design, implemented in advanced 0.18 /spl mu/m standard CMOS technology, is presented.

[1]  P. Agnello,et al.  CMOS active pixel image sensors fabricated using a 1.8 V, 0.25 /spl mu/m CMOS technology , 1996, International Electron Devices Meeting. Technical Digest.

[2]  P. Agnello,et al.  CMOS active pixel image sensors fabricated using a 1.8 V, 0.25 /spl mu/m CMOS technology , 1996 .

[3]  Bing J. Sheu,et al.  A low power smart vision system based on active pixel sensor integrated with programmable neural processor , 1997, Proceedings International Conference on Computer Design VLSI in Computers and Processors.

[4]  E. Fossum,et al.  CMOS active pixel image sensors for highly integrated imaging systems , 1997, IEEE J. Solid State Circuits.

[5]  Mark C. Johnson,et al.  Estimation of standby leakage power in CMOS circuits considering accurate modeling of transistor stacks , 1998, ISLPED '98.

[6]  M. Sherony,et al.  Mainstreaming of the SOI technology , 1999, 1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345).

[7]  A single chip CMOS APS camera with direct frame difference output , 1999, Proceedings of the IEEE 1999 Custom Integrated Circuits Conference (Cat. No.99CH36327).

[8]  B. Pain,et al.  High responsivity CMOS imager pixel implemented in SOI technology , 2000, 2000 IEEE International SOI Conference. Proceedings (Cat. No.00CH37125).

[9]  E.R. Fossum,et al.  A 1.2 V micropower CMOS active pixel image sensor for portable applications , 2000, 2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056).

[10]  Chao Shen,et al.  Low voltage CMOS active pixel sensor design methodology with device scaling considerations , 2001, Proceedings 2001 IEEE Hong Kong Electron Devices Meeting (Cat. No.01TH8553).

[11]  M. Chan,et al.  A low voltage hybrid bulk/SOI CMOS active pixel image sensor , 2001, IEEE Electron Device Letters.

[12]  L. McIlrath.  A low-power low-noise ultrawide-dynamic-range CMOS imager with pixel-parallel A/D conversion , 2001, IEEE J. Solid State Circuits.

[13]  Wing-Hung Ki,et al.  A 1.0-V V/sub DD/ CMOS active-pixel sensor with complementary pixel architecture and pulsewidth modulation fabricated with a 0.25-/spl mu/m CMOS process , 2002 .

[14]  Wing-Hung Ki,et al.  A low-voltage CMOS complementary active pixel sensor (CAPS) fabricated using a 0.25 μm CMOS technology , 2002 .

[15]  Jean-Luc Nagel,et al.  Smart low-power CMOS cameras for 3G mobile communicators , 2002, ICCSC'02. 1st IEEE International Conference on Circuits and Systems for Communications. Proceedings (IEEE Cat. No.02EX605).

[16]  Mansun Chan,et al.  A low-voltage CMOS complementary active pixel sensor (CAPS) fabricated using a 0.25 μm CMOS technology , 2002, IEEE Electron Device Letters.

[17]  Eric R. Fossum,et al.  A 1.5-V 550-/spl mu/W 176/spl times/144 autonomous CMOS active pixel image sensor , 2003 .

[18]  Orly Yadid-Pecht,et al.  Low power global shutter CMOS active pixel image sensor with ultra-high dynamic range , 2004, Proceedings of the 2004 11th IEEE International Conference on Electronics, Circuits and Systems, 2004. ICECS 2004..