Rectangular and L-shaped GaAs/AlGaAs lasers with very high quality etched facets
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Joseph M. Ballantyne | C. M. Harding | B. A. Soltz | S. Wong | C. Harding | J. Ballantyne | B. Soltz | S. Simon Wong | A. Behfar-Rad | A. Behfar-Rad
[1] W. D. Goodhue,et al. Monolithic GaAs/AlGaAs diode laser/deflector devices for light emission normal to the surface , 1986 .
[2] S. Wong,et al. Masking Considerations in Chemically Assisted Ion Beam Etching of GaAs / AlGaAs Laser Structures , 1989 .
[3] G. A. Vawter,et al. Nonselective etching of GaAs/AlGaAs double heterostructure laser facets by Cl2 reactive ion etching in a load‐locked system , 1987 .
[4] K. Asakawa,et al. GaAs and AlGaAs anisotropic fine pattern etching using a new reactive ion beam etching system , 1985 .
[5] M. E. Givens,et al. Anomalous temperature dependence of threshold for thin quantum well AlGaAs diode lasers , 1986 .
[6] E. D. Wolf,et al. High‐power AlGaAs/GaAs single quantum well lasers with chemically assisted ion beam etched mirrors , 1987 .
[7] J. Shealy. High‐efficiency superlattice graded‐index separate confining heterostructure lasers with AlGaAs single quantum wells , 1988 .
[8] W. J. Grande,et al. One‐step two‐level etching technique for monolithic integrated optics , 1987 .
[9] K. Ploog,et al. Homogeneous gain saturation in GaAs/AlGaAs quantum well lasers , 1985 .
[10] P. Zory,et al. Cavity length dependence of the threshold behavior in thin quantum well semiconductor lasers , 1987 .
[11] B.F. Griffing,et al. Contrast enhanced photolithography , 1983, IEEE Electron Device Letters.