论文信息 - Broad‐area high‐power semiconductor optical amplifier

Broad‐area high‐power semiconductor optical amplifier

Operating characteristics of a high‐power 400‐μm‐wide, 500‐μm‐long double‐pass near‐traveling‐wave GaAlAs amplifier are described. In pulsed operation, 2.5 W of diffraction‐limited emission at 820 nm was obtained with an external power gain of 10 dB and 24% electrical to optical conversion efficiency.

Lew Goldberg | Joseph F. Weller | L. Goldberg | J. Weller

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