Shaping High-Power IGBT Switching Transitions by Active Voltage Control for Reduced EMI Generation

High-performance power switching devices [insulated-gate bipolar transistors (IGBTs)] realize high-performance power converters. Unfortunately, with a high switching speed of the IGBT-freewheel diode chopper cell, the circuit becomes intrinsic sources of high-level electromagnetic interference (EMI). Therefore, costly EMI filters or shielding is normally demanded on the load and supply sides. An S-shaped voltage transient with a high-order time derivative eliminates the discontinuity in the switching transient and can suppress high-frequency spectrum of EMI emissions. More importantly, it provides an improved tradeoff between EMI generation and switching time, therefore switching losses. This promising tradeoff can be explored further for better high-frequency EMI suppression by using the infinitely differentiable characteristics of Gaussian S-shaped transients. However, current gate drive schemes cannot achieve the S shaping. In this paper, active voltage control is applied and improved successfully to define IGBT switching dynamics with a smoothed Gaussian waveform.

[1]  Nadir Idir,et al.  Active gate voltage control of turn-on di/dt and turn-off dv/dt in insulated gate transistors , 2006, IEEE Transactions on Power Electronics.

[2]  Harald Kuhn,et al.  Digital adaptive driving strategies for high-voltage IGBTs , 2011, 2011 IEEE Energy Conversion Congress and Exposition.

[3]  I. Baraia,et al.  An Experimentally Verified Active Gate Control Method for the Series Connection of IGBT/Diodes , 2012, IEEE Transactions on Power Electronics.

[4]  P.R. Palmer,et al.  Active Voltage control of IGBTs for high power applications , 2004, IEEE Transactions on Power Electronics.

[5]  Xueqiang Zhang,et al.  Predictive optimisation of high-power IGBT switching under Active Voltage Control , 2013, IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society.

[6]  Xin Yang,et al.  Optimised IGBT turn-off under active voltage control in PEBB applications , 2013, 2013 15th European Conference on Power Electronics and Applications (EPE).

[7]  T.M. Jahns,et al.  Development of an Active dv/dt Control Algorithm for Reducing Inverter Conducted EMI with Minimal Impact on Switching Losses , 2007, 2007 IEEE Power Electronics Specialists Conference.

[8]  T Ericsen,et al.  The Second Electronic Revolution (It's All About Control) , 2009, IEEE Transactions on Industry Applications.

[9]  N. Patin,et al.  Toward an optimal Heisenberg's closed-loop gate drive for Power MOSFETs , 2012, IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society.

[10]  N. Oswald,et al.  An Experimental Investigation of the Tradeoff between Switching Losses and EMI Generation With Hard-Switched All-Si, Si-SiC, and All-SiC Device Combinations , 2014, IEEE Transactions on Power Electronics.

[11]  Christian Gerster,et al.  Gate-Controlled dv/dt- and di/dt-Limitation in High Power IGBT Converters , 1996 .

[12]  Xueqiang Zhang,et al.  IGBT converters conducted EMI analysis by controlled multiple-slope switching waveform approximation , 2013, 2013 IEEE International Symposium on Industrial Electronics.

[13]  D. Holliday,et al.  Analysis of Shaped Pulse Transitions in Power Electronic Switching Waveforms for Reduced EMI Generation , 2011, IEEE Transactions on Industry Applications.

[14]  L. Ran,et al.  Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence , 2011, IEEE Transactions on Power Electronics.

[15]  Derrick Holliday,et al.  High-bandwidth, high-fidelity in-circuit measurement of power electronic switching waveforms for EMI generation analysis , 2011, 2011 IEEE Energy Conversion Congress and Exposition.

[16]  R. Bausiere,et al.  Reduction of radiated and conducted emissions in power electronic circuits by the continuous derivative control method (CDCM) , 1998 .

[17]  A. Mertens,et al.  Considerations for a Digital Gate Unit in high power applications , 2008, 2008 IEEE Power Electronics Specialists Conference.

[18]  Fang Z. Peng,et al.  Closed-Loop Gate Drive for High Power IGBTs , 2009, 2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition.

[19]  Zhihua Zhao,et al.  Multiple Slope Switching Waveform Approximation to Improve Conducted EMI Spectral Analysis of Power Converters , 2006, IEEE Transactions on Electromagnetic Compatibility.

[20]  Y. Wang,et al.  An analysis of high power IGBT switching under cascade active voltage control , 2005, Fourtieth IAS Annual Meeting. Conference Record of the 2005 Industry Applications Conference, 2005..

[21]  D. Magnon,et al.  Graphical analysis of the spectra of EMI sources in power electronics , 2005, IEEE Transactions on Power Electronics.

[22]  J. W. Kolar,et al.  Closed-loop IGBT gate drive featuring highly dynamic di/dt and dv/dt control , 2012, 2012 IEEE Energy Conversion Congress and Exposition (ECCE).