Analog memory characteristics of 1T1R MoOx resistive random access memory

Multilevel resistive random access memory (ReRAM) is known as a key device for neural networks and reconfigurable computing. Control of the resistance is important to utilize ReRAM as an analog-resistance memory. In this study, we confirm that MoOx ReRAM shows analog memory characteristics by the control of compliance current. In addition, we propose a verification method to achieve target resistances.