150 W GaN-on-Si RF power transistor
暂无分享,去创建一个
J. D. Brown | S. Singhal | Edwin L. Piner | J. Riddle | W. Nagy | R. Borges | Jerry W. Johnson | Robert Joseph Therrien | A. Chaudhari | A. W. Hanson | S. Booth | Pradeep Rajagopal | Kevin J. Linthicum
[1] S. Singhal,et al. Performance of AlGaN/GaN HFETs fabricated on 100 mm silicon substrates for wireless basestation applications , 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).
[2] Y. Okamoto,et al. A 149W recessed-gate AlGaN/GaN FP-FET , 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).
[3] J. Milligan,et al. High power hybrid and MMIC amplifiers using wide-bandgap semiconductor devices on semi-insulating SiC substrates , 2002, 60th DRC. Conference Digest Device Research Conference.
[4] S. Yokokawa,et al. An over 200-W output power GaN HEMT push-pull amplifier with high reliability , 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).
[5] B. Vassilakis,et al. Wireless base station technology evolution , 2004, IEEE Compound Semiconductor Integrated Circuit Symposium, 2004..
[6] A. Vescan,et al. 12 W/mm AlGaN-GaN HFETs on silicon substrates , 2004, IEEE Electron Device Letters.