Impact of Parasitic Capacitance and Ferroelectric Parameters on Negative Capacitance FinFET Characteristics

In this letter, we present a compact model and analyze the impact of key parameters on negative capacitance FinFET (NC-FinFET) device operation. The developed model solves FinFET device electrostatics and Landau-Khalatnikov equations self-consistently. An experimental NC-FinFET device is accurately modeled and the experimentally calibrated parameters are used to analyze the NC-FinFETs device performance and its dependence on several key parameters.

[1]  Chenming Hu,et al.  Sub-60mV-swing negative-capacitance FinFET without hysteresis , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

[2]  Chenming Hu,et al.  New industry standard FinFET compact model for future technology nodes , 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

[3]  S. Datta,et al.  Use of negative capacitance to provide voltage amplification for low power nanoscale devices. , 2008, Nano letters.

[4]  Asif Khan,et al.  0.2V adiabatic NC-FinFET with 0.6mA/µm ION and 0.1nA/µm IOFF , 2015, 2015 73rd Annual Device Research Conference (DRC).

[5]  C. Hu,et al.  Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation , 2011, 2011 International Electron Devices Meeting.

[6]  C. Hu,et al.  Circuit performance analysis of negative capacitance FinFETs , 2016, 2016 IEEE Symposium on VLSI Technology.

[7]  S. Datta,et al.  Physics-Based Circuit-Compatible SPICE Model for Ferroelectric Transistors , 2016, IEEE Electron Device Letters.