ELECTROMAGNETICALLY INDUCED NEGATIVE REFRACTIVE INDEX IN DOPED SEMICONDUCTORS AT OPTICAL FREQUENCIES

Based on methods of quantum optics, we discuss the possibility of achieving the negative index of refraction in a semiconductor with donor-like impurities. The quantum states of hydrogen-like donor atom and states of an electron in conduction band constitute a discrete-level atomic medium within the optical range. The coherent coupling of an electric dipole transition with a magnetic dipole transition leads to permeability and permittivity responses and, within some frequency band, ensures the negative refractive index. The magnetic moment between two quasi-atomic states separated by optical frequencies is induced by a low-frequency electromagnetic field. The implementation of this scheme is carried out in tin-doped indium oxide, and the calculations show feasibility of the effect within a broad bandwidth ∼2% with a high figure of merit greater than 10 in the optical regime.

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