Oxidation induced AlAs/GaAs superlattice disordering
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[1] F. Cardone,et al. Formation of highly n-doped gallium arsenide layers by rapid thermal oxidation followed by rapid thermal annealing of silicon-capped gallium arsenide , 1991 .
[2] F. Cardone,et al. N+ doping of gallium arsenide by rapid thermal oxidation of a silicon cap , 1990 .
[3] D. Ferry,et al. Gallium Arsenide Technology , 1990 .
[4] B. Meyerson,et al. Oxidation studies of SiGe , 1989 .
[5] Dennis G. Deppe,et al. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures , 1988 .
[6] K. Kavanagh,et al. The interdiffusion of Si, P, and In at polysilicon/GaAs interfaces , 1988 .
[7] N. Holonyak,et al. Sensitivity of Si diffusion in GaAs to column IV and VI donor species , 1988 .
[8] C. Magee,et al. Diffusion of Ge in GaAs at SiO2-encapsulated Ge–GaAs interfaces , 1987 .
[9] T. Kim,et al. Pulse Diffusion of Ge into GaAs , 1986 .
[10] K. Kavanagh,et al. Silicon diffusion at polycrystalline‐Si/GaAs interfaces , 1985 .
[11] A. Nowick,et al. Diffusion in crystalline solids , 1984 .
[12] U. König,et al. XPS Study of Annealed SiO2 / GaAs Interfaces , 1983 .
[13] G. R. Antell. The diffusion of silicon in gallium arsenide , 1965 .
[14] Paul Shewmon,et al. Diffusion in Solids , 2016 .
[15] L. Vieland. The effect of arsenic pressure on impurity diffusion in gallium arsenide , 1961 .