论文信息 - Liquid phase epitaxial growth and luminescence of InAs1-x-ySbxPy p-n junctions

Liquid phase epitaxial growth and luminescence of InAs1-x-ySbxPy p-n junctions

An investigation was made into the epitaxial growth and luminescence properties of InAs1-x-ySbxPy p-n junctions grown by liquid phase epitaxy (LPE). Details of the growth conditions and X-ray analysis are given, together with both photoluminescence (PL) and electroluminescence (EL) results measured over the temperature range 78-295 K. The temperature dependence of the luminescence emission was investigated in detail and compared with theory.

Anthony Krier | A. Krier | D R Rowe | D. Rowe

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