Monolithic dual-gate MESFET power amplifiers for Ka-band

An MMIC (microwave monolithic integrated circuit) using a dual-gate MESFET (DGMF) for variable-power application in the 33-GHz band has been developed. A single-stage amplifier demonstrated a linear gain of 9.1 dB and a dynamic range of 30 dB. A two-stage balanced amplifier provided a linear gain of 16.5 dB and maximum output power of 25.3 dBm at 33 GHz. Minimal variations in the insertion phase and power-added efficiency of the DGMF as a function of second-gate control also were demonstrated. This device may be suitable for application in phased-array systems for communications satellites and radar systems.<<ETX>>