Ge-on-Si photodiode with black silicon boosted responsivity
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Thomas Käsebier | Andreas Tünnermann | Jörg Schulze | Ernst-Bernhard Kley | Martin Steglich | Michael Oehme | Matthias Zilk | Konrad Kostecki | A. Tünnermann | E. Kley | M. Oehme | J. Schulze | T. Käsebier | M. Zilk | M. Steglich | K. Kostecki
[1] R. Newman,et al. Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°K , 1955 .
[2] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.
[3] D. D. Cannon,et al. High-speed resonant cavity enhanced Ge photodetectors on reflecting Si substrates for 1550-nm operation , 2005, IEEE Photonics Technology Letters.
[4] M. Berroth,et al. Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth , 2005, IEEE Photonics Technology Letters.
[5] S. Sze,et al. Physics of Semiconductor Devices: Sze/Physics , 2006 .
[6] Manfred Berroth,et al. High bandwidth Ge p-i-n photodetector integrated on Si , 2006 .
[7] Jurgen Michel,et al. High performance, waveguide integrated Ge photodetectors. , 2007, Optics express.
[8] M. Morse,et al. 31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate. , 2007, Optics express.
[9] J. Werner,et al. Photocurrent analysis of a fast Ge p-i-n detector on Si , 2007 .
[10] Stéphane Larouche,et al. OpenFilters: open-source software for the design, optimization, and synthesis of optical filters. , 2008, Applied optics.
[11] M. Lipson,et al. High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding. , 2008, Optics express.
[12] M. Berroth,et al. Ge-on-Si p-i-n Photodiodes With a 3-dB Bandwidth of 49 GHz , 2009, IEEE Photonics Technology Letters.
[13] P. Crozat,et al. 42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide. , 2009, Optics express.
[14] P. Crozat,et al. 40 Gb/s surface-illuminated Ge-on-Si photodetectors , 2009 .
[15] Thomas Käsebier,et al. Optical modeling of needle like silicon surfaces produced by an ICP-RIE process , 2010, Photonics Europe.
[16] J. Michel,et al. High-performance Ge-on-Si photodetectors , 2010 .
[17] J. Werner,et al. Germanium on Silicon Photodetectors with Broad Spectral Range , 2010 .
[18] G. Assanto,et al. Low-temperature germanium thin films on silicon , 2011 .
[19] Jian Wang,et al. Ge-Photodetectors for Si-Based Optoelectronic Integration , 2011, Sensors.
[20] M. Watts,et al. Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current. , 2011, Optics express.
[21] Thomas Käsebier,et al. Black silicon for solar cell applications , 2012, Photonics Europe.
[22] Franz–Keldysh effect of germanium-on-silicon p–i–n diodes within a wide temperature range , 2012 .
[23] Hao-Chih Yuan,et al. An 18.2%-efficient black-silicon solar cell achieved through control of carrier recombination in nanostructures. , 2012, Nature nanotechnology.
[24] Andreas Tünnermann,et al. Improvement of Ge-on-Si photodiodes by black silicon light trapping , 2013 .
[25] Jörg Schulze,et al. Franz-Keldysh effect in GeSn pin photodetectors , 2014 .
[26] A. Tünnermann,et al. The structural and optical properties of black silicon by inductively coupled plasma reactive ion etching , 2014 .
[27] V. Naumann,et al. Black Silicon Photovoltaics , 2015 .