III-Nitride ultra-wide-bandgap electronic devices

[1]  A. Allerman,et al.  Saturation Velocity Measurement of Al0.7Ga0.3N-Channel High Electron Mobility Transistors , 2019, Journal of Electronic Materials.

[2]  S. Rajan,et al.  Al0.75Ga0.25N/Al0.6Ga0.4N heterojunction field effect transistor with fT of 40 GHz , 2019, Applied Physics Express.

[3]  A. Allerman,et al.  High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study , 2019, Japanese Journal of Applied Physics.

[4]  P. Kotula,et al.  Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors , 2019, IEEE Journal of the Electron Devices Society.

[5]  A. Allerman,et al.  Enhancement-mode Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistor with fluorine treatment , 2019, Applied Physics Letters.

[6]  A. Allerman,et al.  Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate , 2019, Journal of Vacuum Science & Technology B.

[7]  Albert G. Baca,et al.  Stability in Fluorine-Treated Al-Rich High Electron Mobility Transistors with 85% Al-Barrier Composition , 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

[8]  A. Allerman,et al.  AlGaN polarization-doped field effect transistor with compositionally graded channel from Al0.6Ga0.4N to AlN , 2019, Applied Physics Letters.

[9]  S. E. Swanson,et al.  Radiation Response of AlGaN-Channel HEMTs , 2019, IEEE Transactions on Nuclear Science.

[10]  E. Beam,et al.  X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors , 2018, IEEE Electron Device Letters.

[11]  A. Allerman,et al.  Ultra-wide band gap AlGaN polarization-doped field effect transistor , 2018, Japanese Journal of Applied Physics.

[12]  Alex Q. Huang,et al.  The 2018 GaN power electronics roadmap , 2018, Journal of Physics D: Applied Physics.

[13]  E. Towe,et al.  Progress in efficient doping of high aluminum-containing group III-nitrides , 2018 .

[14]  A. Allerman,et al.  High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm , 2018, IEEE Electron Device Letters.

[15]  M. Islam,et al.  Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges , 2017 .

[16]  M. Coltrin,et al.  Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys , 2017 .

[17]  Matthew J. Marinella,et al.  Evaluation of a “Field Cage” for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown Into the kV Regime , 2017, IEEE Transactions on Electron Devices.

[18]  A. Allerman,et al.  Ohmic contacts to Al‐rich AlGaN heterostructures , 2017 .

[19]  G. Simin,et al.  High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates , 2017, IEEE Electron Device Letters.

[20]  Jason C. Neely,et al.  Generation-After-Next Power Electronics: Ultrawide-bandgap devices, high-temperature packaging, and magnetic nanocomposite materials , 2017, IEEE Power Electronics Magazine.

[21]  M. Coltrin,et al.  Transport and breakdown analysis for improved figure-of-merit for AlGaN power devices , 2017 .

[22]  S. Rajan,et al.  AlGaN Channel Field Effect Transistors with Graded Heterostructure Ohmic Contacts , 2016, 1608.06686.

[23]  A. Allerman,et al.  An AlN/Al0.85Ga0.15N high electron mobility transistor , 2016 .

[24]  Jonathan J. Wierer,et al.  Al0 .3Ga0.7N PN diode with breakdown voltage >1600 V , 2016 .

[25]  S. Rajan,et al.  Recess-Free Nonalloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs , 2015, IEEE Electron Device Letters.

[26]  S. Rajan,et al.  Modeling of High Composition AlGaN Channel HEMTs with Large Threshold Voltage , 2014, 1411.1447.

[27]  H. Tokuda,et al.  AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation , 2014 .

[28]  M. Suita,et al.  AlGaN Channel HEMT With Extremely High Breakdown Voltage , 2013, IEEE Transactions on Electron Devices.

[29]  Enrico Bellotti,et al.  A numerical study of carrier impact ionization in AlxGa1−xN , 2012 .

[30]  R. S. Pengelly,et al.  A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs , 2012, IEEE Transactions on Microwave Theory and Techniques.

[31]  S. Hashimoto,et al.  Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack , 2011 .

[32]  S. Hashimoto,et al.  High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate , 2010 .

[33]  Debdeep Jena,et al.  Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures , 2010, Science.

[34]  B. Jayant Baliga,et al.  Fundamentals of Power Semiconductor Devices , 2008 .

[35]  Y. Aoyagi,et al.  Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors , 2008 .

[36]  Rudiger Quay,et al.  Gallium Nitride Electronics , 2008 .

[37]  Y. Aoyagi,et al.  First Operation of AlGaN Channel High Electron Mobility Transistors , 2007 .

[38]  K. Kumakura,et al.  High Critical Electric Field Exceeding 8 MV/cm Measured Using an AlGaN p–i–n Vertical Conducting Diode on n-SiC Substrate , 2006 .

[39]  Toshiki Makimoto,et al.  High critical electric field of AlxGa1-xN p-i-n vertical conducting diodes on n-SiC substrates , 2006 .

[40]  A. Chini,et al.  High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates , 2004, IEEE Electron Device Letters.

[41]  E. Santi,et al.  An assessment of wide bandgap semiconductors for power devices , 2003 .

[42]  D. Vanderbilt,et al.  Spontaneous polarization and piezoelectric constants of III-V nitrides , 1997, cond-mat/9705105.

[43]  A. Allerman,et al.  Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature , 2017 .

[44]  A. Allerman,et al.  Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices , 2017 .

[45]  A. Allerman,et al.  High Temperature Operation of Al0.45Ga0.55N/Al0.30Ga0.70N High Electron Mobility Transistors , 2017 .

[46]  P. Kotula,et al.  Planar Ohmic Contacts to Al0.45Ga0.55N/Al0.3Ga0.7N High Electron Mobility Transistors , 2017 .

[47]  E. Johnson Physical limitations on frequency and power parameters of transistors , 1965 .