论文信息 - Analytical Thermal Noise Model of Deep-submicron MOSFETs

Analytical Thermal Noise Model of Deep-submicron MOSFETs

This paper presents an analytical noise model for the drain thermal noise, the induced gate noise, and their correlation coefficient in deep-submicron MOSFETs, which is valid in both linear region and saturation region. The impedance field method was used to calculate the external drain thermal noise current. The effect of channel length modulation was included in the analytical equation. The noise behavior of MOSFETs with decreasing channel length was successfully predicted from our model.

Hyungcheol Shin | Jongwook Jeon | Se Young Kim

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