Time dependent dielectric breakdown of SiN, SiBCN and SiOCN spacer dielectrics

The dielectric breakdown of SiN, SiBCN, and SiOCN MOSFET spacer dielectrics are studied. Using the Self-Consistent-Acceleration-Poisson-Statistics (SCAPS) method, SiN follows a 1/E dependent breakdown model while SiBCN and SiOCN show behavior consistent with the power-law model. The likelihood of the SCAPS method correctly identifying the best acceleration model is quantified through Monte-Carlo simulations. Trends in Weibull slope, power-law voltage acceleration exponent, activation energy, and defect generation rate is compared and contrasted to the well-studied SiO2 gate dielectric.

[1]  Jordi Suñé,et al.  Experimental evidence of T/sub BD/ power-law for voltage dependence of oxide breakdown in ultrathin gate oxides , 2002 .

[2]  E.Y. Wu,et al.  On Voltage Acceleration Models of Time to Breakdown—Part I: Experimental and Analysis Methodologies , 2009, IEEE Transactions on Electron Devices.

[3]  C. Auth,et al.  A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors , 2012, 2012 Symposium on VLSI Technology (VLSIT).

[4]  Ernest Y. Wu,et al.  On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part I: theory, methodology, experimental techniques , 2002 .

[5]  J. Sune,et al.  New physics-based analytic approach to the thin-oxide breakdown statistics , 2001, IEEE Electron Device Letters.

[6]  R. G. Southwick,et al.  Tunneling currents and reliability of atomic-layer-deposited SiBCN for low-κ spacer dielectrics , 2014, 2014 IEEE International Reliability Physics Symposium.

[7]  S. Narasimha,et al.  A novel ALD SiBCN low-k spacer for parasitic capacitance reduction in FinFETs , 2015, Symposium on VLSI Technology.

[8]  S. Yokogawa,et al.  Statistics of breakdown field and time-dependent dielectric breakdown in contact-to-poly modules , 2011, 2011 International Reliability Physics Symposium.

[9]  J. Suñé,et al.  Hydrogen-release mechanisms in the breakdown of thin SiO2 films. , 2004, Physical review letters.

[10]  Guido Groeseneken,et al.  A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides , 1995, Proceedings of International Electron Devices Meeting.

[11]  B. Lherron,et al.  A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI , 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.