In this work, platinum (Pt) and palladium (Pd) doped SnO2 thick film sensors have been developed using solid state derived tin oxide powder. Thick film sensors were fabricated on a 1˝x1˝ alumina substrate. The crystal structure and particle size are confirmed by X-ray diffraction (XRD) pattern. The fabricated sensors are tested for varying concentration (1–5%) of hydrogen and methane gas at different operating temperatures (200–350 °C). The effect of Pt and Pd doping have been analysed on different operating temperature, sensitivity and response/recovery time. The doping effects are also very important from view point of the gas selectivity. Based on the experimental results, we have observed the formation of tetragonal structure and particle size of the powders is drastically decreases from 26 to 19 nm after replacing the platinum dopant with palladium. Both the doped sensors have been found to be sensitive for hydrogen as compare to methane however, Pd-doped SnO2 sensor are most selective for hydrogen with very fast response and recovery time (20 s, 101 s) due to the small size effect.
[1]
P. Reichel.
Development of a chemical gas sensor system
,
2005
.
[2]
D. Kohl.
The role of noble metals in the chemistry of solid-state gas sensors
,
1990
.
[3]
Chao-Nan Xu,et al.
Grain size effects on gas sensitivity of porous SnO2-based elements
,
1991
.
[4]
R. P. Gupta,et al.
Oxide Materials for Development of Integrated Gas Sensors—A Comprehensive Review
,
2004
.
[5]
John Robertson,et al.
Electronic structure of SnO2, GeO2, PbO2, TeO2 and MgF2
,
1979
.
[6]
R. P. Agarwal,et al.
Sensitivity, response and recovery time of SnO2 based thick-film sensor array for H2, CO, CH4 and LPG
,
1998
.
[7]
Noboru Yamazoe,et al.
Effects of additives on semiconductor gas sensors
,
1983
.
[8]
S. Morrison.
Selectivity in semiconductor gas sensors
,
1987
.