Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations

The long-term stability of ultraviolet (UV)-C light-emitting diodes (LEDs) is of major importance for many applications. To improve the understanding in this field, we analyzed the degradation of AlGaN-based UVC LEDs and modeled the variation of electrical characteristics by 2D simulations based on the results of deep-level optical spectroscopy (DLOS). The increase in the forward leakage current observed during ageing was ascribed an increase in trap-assisted tunneling. The analysis of the degradation kinetics suggests the role of a defect diffusion process, possibly involving impurities coming from the p-type layers.

[1]  G. Verzellesi,et al.  Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress , 2022, Microelectronics Reliability.

[2]  S. Decoutere,et al.  Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices , 2022, IEEE Transactions on Electron Devices.

[3]  M. Meneghini,et al.  Reliability of Commercial UVC LEDs: 2022 State-of-the-Art , 2022, Electronics.

[4]  M. Meneghini,et al.  Defects and Reliability of GaN‐Based LEDs: Review and Perspectives , 2022, physica status solidi (a).

[5]  M. Kneissl,et al.  Impact of operation parameters on the degradation of 233 nm AlGaN-based far-UVC LEDs , 2022, Journal of Applied Physics.

[6]  M. Kneissl,et al.  Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs , 2021, Scientific Reports.

[7]  G. Verzellesi,et al.  Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics , 2021, Journal of Physics D: Applied Physics.

[8]  M. Kneissl,et al.  Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities , 2020, Applied Physics Letters.

[9]  M. Meneghini,et al.  Modeling the degradation mechanisms of AlGaN-based UV-C LEDs: from injection efficiency to mid-gap state generation , 2020 .

[10]  T. Wunderer,et al.  The 2020 UV emitter roadmap , 2020, Journal of Physics D: Applied Physics.

[11]  S. Einfeldt,et al.  Impact of Insulators and Their Deposition Method on the Reliability of AlInGaN-Based UVB LEDs , 2020, IEEE Photonics Technology Letters.

[12]  Yun Zhang,et al.  Light Extraction and Auger Recombination in AlGaN-Based Ultraviolet Light-Emitting Diodes , 2020, IEEE Photonics Technology Letters.

[13]  M. Kneissl,et al.  Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers , 2020 .

[14]  G. Meneghesso,et al.  Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process , 2020 .

[15]  M. Albrecht,et al.  Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire , 2020 .

[16]  H. Amano,et al.  Stability and degradation of AlGaN-based UV-B LEDs: Role of doping and semiconductor defects , 2019, Microelectronics Reliability.

[17]  M. Kneissl,et al.  Current-induced degradation and lifetime prediction of 310  nm ultraviolet light-emitting diodes , 2019, Photonics Research.

[18]  Haicheng Cao,et al.  Degradation and failure mechanism of AlGaN-based UVC-LEDs , 2019, Solid-State Electronics.

[19]  A. Neviani,et al.  Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs , 2019, Applied Physics Express.

[20]  M. Weyers,et al.  Degradation of (In)AlGaN-Based UVB LEDs and Migration of Hydrogen , 2019, IEEE Photonics Technology Letters.

[21]  Choongsoo S. Shin,et al.  UV-LEDs for the Disinfection and Bio-Sensing Applications , 2018, International Journal of Precision Engineering and Manufacturing.

[22]  M. R. Wagner,et al.  Auger recombination in AlGaN quantum wells for UV light-emitting diodes , 2018, Applied Physics Letters.

[23]  Moritz Brendel,et al.  Degradation effects of the active region in UV-C light-emitting diodes , 2018 .

[24]  T. Wei,et al.  The activation energy for Mg acceptor in AlxGa1-xN alloys in the whole composition range , 2017 .

[25]  P. Parbrook,et al.  Doping of III-nitride materials , 2017 .

[26]  Gaudenzio Meneghesso,et al.  Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes , 2016, Microelectron. Reliab..

[27]  A. Alkauskas,et al.  Tutorial: Defects in semiconductors—Combining experiment and theory , 2016 .

[28]  Christian Dreyer,et al.  Application of LEDs for UV-Curing , 2016 .

[29]  June Key Lee,et al.  Leakage Current Analysis of GaN-Based Light-Emitting Diodes Using a Parasitic Diode Model , 2015, IEEE Transactions on Electron Devices.

[30]  Giovanni Ghione,et al.  Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes , 2015 .

[31]  Giovanni Ghione,et al.  Physics‐based modeling and experimental implications of trap‐assisted tunneling in InGaN/GaN light‐emitting diodes , 2015 .

[32]  H. Hirayama,et al.  Recent Progress in AlGaN‐Based Deep‐UV LEDs , 2015 .

[33]  A. Di Carlo,et al.  Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes , 2014 .

[34]  Javier Martínez-Abaigar,et al.  UV‐B Induced Secondary Plant Metabolites , 2014 .

[35]  G. Meneghesso,et al.  Analysis of Diffusion-Related Gradual Degradation of InGaN-Based Laser Diodes , 2012, IEEE Journal of Quantum Electronics.

[36]  S. Prawer,et al.  Hybrid functional study of Si and O donors in wurtzite AlN , 2011 .

[37]  M Jekel,et al.  Application of GaN-based ultraviolet-C light emitting diodes--UV LEDs--for water disinfection. , 2011, Water research.

[38]  J. Yang,et al.  Defect-related degradation of Deep-UV-LEDs , 2010, Microelectron. Reliab..

[39]  Eugene B. Yakimov,et al.  Two channels of non-radiative recombination in InGaN/GaN LEDs , 2009 .

[40]  Steven A. Ringel,et al.  Quantitative observation and discrimination of AlGaN- and GaN-related deep levels in AlGaN∕GaN heterostructures using capacitance deep level optical spectroscopy , 2006 .

[41]  M. Khan.  AlGaN multiple quantum well based deep UV LEDs and their applications , 2006 .

[42]  R. Pässler,et al.  Photoionization cross-section analysis for a deep trap contributing to current collapse in GaN field-effect transistors , 2004 .

[43]  C. Walle,et al.  First-principles calculations for defects and impurities: Applications to III-nitrides , 2004 .

[44]  T. Jimbo,et al.  Electrical Properties of Acceptor Levels in Mg‐Doped GaN , 2003 .

[45]  Francisco Jimenez-Molinos,et al.  Direct and trap-assisted elastic tunneling through ultrathin gate oxides , 2002 .

[46]  Scheffler,et al.  Fe2+-Fe3+ level as a recombination center in In0.53Ga0.47As. , 1994, Physical review. B, Condensed matter.

[47]  Takashi Mukai,et al.  Hole Compensation Mechanism of P-Type GaN Films , 1992 .