Use of Nanoprobing as the Diagnostic Tool for Nanoscaled Devices

Nanoprobing plays a crucial role for failure analysis (FA) in the nanometer-region generation nodes by having the capability to detect the failure sites and characterize the electrical behaviour of malfunctional devices for better understanding of the failure mechanisms. It also offers a guide to the necessary physical analysis in identifying the cause of failure. This established electrical failure analysis (EFA) methodology at a localized area helps to accelerate the FA. Its application to few of the front-end issues is highlighted in the paper.

[1]  A.V.S. Satya,et al.  Microelectronic test structures for rapid automated contactless inline defect inspection , 1997 .

[2]  J. Chuang,et al.  Conductive atomic force microscopy application on leaky contact analysis and characterization , 2004, IEEE Transactions on Device and Materials Reliability.

[3]  C. Shen,et al.  Couple passive voltage contrast with scanning probe microscope to identify invisible defect out , 2005, Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005..

[4]  D. Ph.,et al.  Failure Analysis System for Submicron Semiconductor Devices , 2006 .

[5]  P. K. Tan,et al.  Using Probing Techniques to Identify and Study High Leakage Issues in the Development of 90nm Process and Below , 2006, 2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits.

[6]  K. Asai,et al.  Suppression of Anomalous Gate Edge Leakage Current by Control of Ni Silicidation Region using Si Ion Implantation Technique , 2006, 2006 International Electron Devices Meeting.