论文信息 - Experimental investigation and numerical simulation of low‐frequency noise in thin film SOI MOSFETs

Experimental investigation and numerical simulation of low‐frequency noise in thin film SOI MOSFETs

The low-frequency noise in N- and P-channel SOI MOSFETs is studied experimentally and by numerical simulations. The behavior of fully depleted devices with thin silicon film is investigated for various substrate biases and film dopings. The importance of volume inversion, which induces a decrease of the noise, is stressed.

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