论文信息 - Growth of very-high-mobility AlGaSb /InAs high-electron-mobility transistor structure on si substrate for high speed electronic applications - 字舞流文

Growth of very-high-mobility AlGaSb /InAs high-electron-mobility transistor structure on si substrate for high speed electronic applications

Chun-Yen Chang | H. Yamaguchi | Yueh-Chin Lin | E. Chang | Y. Hirayama | Yen-Ting Hsieh | M. Ueki