Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor

A subnanometer thick interfacial oxide layer present between the Ni/Au gate metal stack and semiconducting epilayers of an AlGaN/GaN high electron mobility transistor was characterized using high-angle annular dark-field scanning transmission electron microscopy and laser-assisted atom probe tomography. It was revealed that the oxide is composed of distinct Ni-oxide-rich and Al-oxide-rich layers with no Ga-oxide detected. The results provide information that is of potential importance in determining failure mechanisms and improving reliability of AlGaN/GaN high electron mobility transistors.

[1]  Liu Lu,et al.  Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors , 2010 .

[2]  A. Vescan,et al.  12 W/mm AlGaN-GaN HFETs on silicon substrates , 2004, IEEE Electron Device Letters.

[3]  J. D. del Alamo,et al.  Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors , 2008, IEEE Electron Device Letters.

[4]  T. Li,et al.  Reliability of large periphery GaN-on-Si HFETs , 2005, [Reliability of Compound Semiconductors] ROCS Workshop, 2005..

[5]  Peter W Voorhees,et al.  Direct measurement of dopant distribution in an individual vapour-liquid-solid nanowire. , 2009, Nature nanotechnology.

[6]  P. Flaitz,et al.  Imaging of Arsenic Cottrell Atmospheres Around Silicon Defects by Three-Dimensional Atom Probe Tomography , 2007, Science.

[7]  Hideki Hasegawa,et al.  Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures , 2001 .

[8]  Jinhyung Kim,et al.  AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress , 2011, Microelectron. Reliab..

[9]  Michael K Miller,et al.  Review of Atom Probe FIB-Based Specimen Preparation Methods , 2007, Microscopy and Microanalysis.

[10]  Debbie J. Stokes,et al.  Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering , 2007 .

[11]  Paul Saunier,et al.  Physical degradation of GaN HEMT devices under high drain bias reliability testing , 2009, Microelectron. Reliab..

[12]  S. Corcoran,et al.  3-D analysis of semiconductor dopant distributions in a patterned structure using LEAP. , 2008, Ultramicroscopy.

[13]  MILTON FENG,et al.  Device technologies for RF front-end circuits in next-generation wireless communications , 2004, Proceedings of the IEEE.

[14]  Effect of oxidation on the optical and surface properties of AlGaN , 2006 .

[15]  H. Ohno,et al.  3DAP analysis of (Ga,Mn)As diluted magnetic semiconductor thin film. , 2009, Ultramicroscopy.

[16]  S. Singhal,et al.  Linearity characteristics of microwave-power GaN HEMTs , 2003 .

[17]  Seong-Yong Park,et al.  TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs , 2008, IEEE Electron Device Letters.

[18]  S. Clark,et al.  The influence of chemical treatment and thermal annealing on AlxGa1-xN surfaces : An XPS study , 2006 .

[19]  B. Gorman,et al.  Atom Probe Analysis of III–V and Si-Based Semiconductor Photovoltaic Structures , 2007, Microscopy and Microanalysis.

[20]  Jungwoo Joh,et al.  GaN HEMT reliability , 2009, Microelectron. Reliab..

[21]  H. Fraser,et al.  Some aspects of atom probe specimen preparation and analysis of thin film materials. , 2004, Ultramicroscopy.

[22]  R. Davis,et al.  Real‐time assessment of overlayer removal on GaN, AlN, and AlGaN surfaces using spectroscopic ellipsometry , 1996 .

[23]  A. Nishida,et al.  Dopant distribution in gate electrode of n- and p-type metal-oxide-semiconductor field effect transistor by laser-assisted atom probe , 2009 .

[24]  Andrei Vescan,et al.  AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon ( 1 1 1 ) substrates , 2002 .

[25]  T. Hashizume,et al.  X-ray photoelectron spectroscopy characterization of AlGaN surfaces exposed to air and treated in NH4OH solution , 2000 .

[26]  T. C. Anthony,et al.  Focused ion-beam milling for field-ion specimen preparation:: preliminary investigations , 1998 .

[27]  K. F. Russell,et al.  Strategies for fabricating atom probe specimens with a dual beam FIB. , 2005, Ultramicroscopy.