Full-Color III-Nitride Nanowire Light-Emitting Diodes

III-nitride nanowire based lightemitting diodes (LEDs) have been intensively studied as promising candidates for future lighting technologies. Compared to conventional GaN-based planar LEDs, III-nitride nanowire LEDs exhibit numerous advantages including greatly reduced dislocation densities, polarization elds, and quantum-con ned Stark e ect due to the e ective lateral stress relaxation, promising high e ciency full-color LEDs. Beside these advantages, however, several issues have been identi ed as the limiting factors for further enhancing the nanowire LED quantum e ciency and light output power. Some of the most probable causes have been identi ed as due to the lack of carrier con nement in the active region, non-uniform carrier distribution, electron over ow, and the nonradiative recombination along the nanowire lateral surfaces. Moreover, the presence of large surface states and defects contribute signi cantly to the carrier loss in nanowire LEDs. Consequently, reported nanowire LEDs show relatively low output power. Recently, III-nitride core-shell nanowire LED structures have been reported as the most e cient nanowire white LEDs with a record high output power which is more than 500 times stronger than that of nanowire white LEDs without using core-shell structure. In this context, we will review the current status, challenges and approaches for the high performance IIInitride nanowire LEDs. More speci cally, we will describe the current methods for the fabrication of nanowire structures including top-down and bottom-up approaches, followed by characteristics of III-nitride nanowire LEDs. We will then discuss the carrier dynamics and loss mechanism in nanowire LEDs. The typical designs for the enhanced performance of III-nitride nanowire LEDs will be presented next. The color tunable nanowire LEDs with emission wavelengths in the visible spectrum, and phosphorfree nanowire white LEDs will be nally discussed.

[1]  Christopher R. Bowen,et al.  Variations in mechanisms of selective area growth of GaN on nano-patterned substrates by MOVPE , 2010 .

[2]  Christopher Hahn,et al.  Epitaxial growth of InGaN nanowire arrays for light emitting diodes. , 2011, ACS nano.

[3]  Giovanni Ghione,et al.  Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study , 2013 .

[4]  Martin Strassburg,et al.  Core–shell InGaN nanorod light emitting diodes: Electronic and optical device properties , 2012 .

[5]  N Tajik,et al.  Photoluminescence model of sulfur passivated p-InP nanowires. , 2012, Nanotechnology.

[6]  Tao Wang,et al.  Characterization of InGaN-based nanorod light emitting diodes with different indium compositions , 2012 .

[7]  Dong-Seon Lee,et al.  Size-controlled InGaN/GaN nanorod array fabrication and optical characterization. , 2013, Optics express.

[8]  S. Gwo,et al.  InGaN/GaN nanorod array white light-emitting diode , 2010 .

[9]  Tien Khee Ng,et al.  Water splitting to hydrogen over epitaxially grown InGaN nanowires on a metallic titanium/silicon template: reduced interfacial transfer resistance and improved stability to hydrogen , 2018 .

[10]  Michael R. Krames,et al.  Auger recombination in InGaN measured by photoluminescence , 2007 .

[11]  Takashi Ishikawa,et al.  Cultivation of Microalgae for Live Food under White Light-emitting Diodes (LEDs) , 2012 .

[12]  Hieu Pham Trung Nguyen,et al.  Phosphor-free III-nitride nanowire white-light-emitting diodes for visible light communication , 2018, Smart Structures and Materials + Nondestructive Evaluation and Health Monitoring.

[13]  Martin Strassburg,et al.  Polarity and Its Influence on Growth Mechanism during MOVPE Growth of GaN Sub-micrometer Rods , 2011 .

[14]  R. Molnar,et al.  Surface recombination and sulfide passivation of GaN , 2000 .

[15]  Chun-Hsiang Chang,et al.  High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes. , 2010, Optics express.

[16]  G A Botton,et al.  p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111). , 2011, Nano letters.

[17]  Enrique Calleja,et al.  Formation mechanisms of GaN nanowires grown by selective area growth homoepitaxy. , 2015, Nano letters.

[18]  T. Schumann,et al.  Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer , 2011, Nanotechnology.

[19]  R. Klie,et al.  Mixed polarity in polarization-induced p-n junction nanowire light-emitting diodes. , 2013, Nano letters.

[20]  Ningfeng Huang,et al.  Electrical and optical characterization of surface passivation in GaAs nanowires. , 2012, Nano letters.

[21]  J. Ristić,et al.  On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy , 2008 .

[22]  Chennupati Jagadish,et al.  Carrier lifetime and mobility enhancement in nearly defect-free core-shell nanowires measured using time-resolved terahertz spectroscopy. , 2009, Nano letters.

[23]  Hadis Morkoç,et al.  Study of SiNx and SiO2 passivation of GaN surfaces , 2007 .

[24]  Charles M. Lieber,et al.  Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes. , 2005, Nano letters.

[25]  Zetian Mi,et al.  Breaking the carrier injection bottleneck of phosphor-free nanowire white light-emitting diodes. , 2013, Nano letters.

[26]  Chennupati Jagadish,et al.  Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy , 2013, Nanotechnology.

[27]  Jian-jang Huang,et al.  GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength. , 2008, Optics express.

[28]  Ta-Cheng Hsu,et al.  Threading dislocation evolution in patterned GaN nanocolumn growth and coalescence overgrowth , 2009 .

[29]  Pallab Bhattacharya,et al.  InGaN/GaN nanowires grown on SiO(2) and light emitting diodes with low turn on voltages. , 2015, Optics express.

[30]  Zetian Mi,et al.  Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers , 2015, Scientific Reports.

[31]  Zetian Mi,et al.  Tunnel injection InGaN/GaN dot-in-a-wire white-light-emitting diodes , 2014 .

[32]  E. Schubert,et al.  Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop , 2008 .

[33]  Pallab Bhattacharya,et al.  Red to near-infrared emission from InGaN/GaN quantum-disks-in-nanowires LED , 2014, 2014 Conference on Lasers and Electro-Optics (CLEO) - Laser Science to Photonic Applications.

[34]  Roland Haitz,et al.  Solid‐state lighting: ‘The case’ 10 years after and future prospects , 2011 .

[35]  Martin Strassburg,et al.  Polarity Control in 3D GaN Structures Grown by Selective Area MOVPE , 2012 .

[36]  Jian-jang Huang,et al.  Investigation of the strain induced optical transition energy shift of the GaN nanorod light emitting diode arrays. , 2011, Optics express.

[37]  Z. Mi,et al.  Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiO(x) by catalyst-free molecular beam epitaxy. , 2013, Nanoscale.

[38]  Shu Yuan,et al.  Performance enhancement of InGaN light-emitting diodes by laser lift-off and transfer from sapphire to copper substrate , 2004 .

[39]  Colin J. Humphreys,et al.  Lattice distortions in GaN thin films on (0001) sapphire , 2010 .

[40]  Achim Trampert,et al.  Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns , 2013 .

[41]  Charles M Lieber,et al.  Semiconductor nanowire heterostructures , 2004, Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences.

[42]  K. Delaney,et al.  Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes , 2011 .

[43]  JianJang Huang,et al.  Application of Nanosphere Lithography to LED Surface Texturing and to the Fabrication of Nanorod LED Arrays , 2009, IEEE Journal of Selected Topics in Quantum Electronics.

[44]  B. Witzigmann,et al.  All-InGaN Phosphorless White Light Emitting Diodes: An Efficiency Estimation , 2012, Journal of Lightwave Technology.

[45]  Ravi Teja Velpula,et al.  Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays , 2019, Micromachines.

[46]  Chris G. Van de Walle,et al.  Microscopic origins of surface states on nitride surfaces , 2007 .

[47]  Kai Cui,et al.  Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon , 2011, Nanotechnology.

[48]  Colin J. Humphreys,et al.  On the origin of threading dislocations in GaN films , 2009 .

[49]  Heqing Wang,et al.  Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes , 2008 .

[50]  Shuji Nakamura,et al.  Measurement of electron overflow in 450 nm InGaN light-emitting diode structures , 2009 .

[51]  Siddharth Rajan,et al.  Polarization-induced pn diodes in wide-band-gap nanowires with ultraviolet electroluminescence. , 2012, Nano letters.

[52]  Pallab Bhattacharya,et al.  InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon , 2011 .

[53]  Peter Blood,et al.  Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm , 2003, Applied Physics Letters.

[54]  H. Kuo,et al.  Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands , 2007 .

[55]  Martin Strassburg,et al.  Molecular beam epitaxial growth and optical properties of red-emitting (λ = 650 nm) InGaN/GaN disks-in-nanowires on silicon , 2013 .

[56]  S. Brueck,et al.  Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes , 2018, Scientific Reports.

[57]  Achim Trampert,et al.  Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks , 2011 .

[58]  Z. Mi,et al.  Visible light-driven efficient overall water splitting using p-type metal-nitride nanowire arrays , 2015, Nature Communications.

[59]  Todd E. Harvey,et al.  Controlled Nucleation of GaN Nanowires Grown with Molecular Beam Epitaxy , 2010 .

[60]  Zetian Mi,et al.  High efficiency green, yellow, and amber emission from InGaN/GaN dot-in-a-wire heterostructures on Si"111… , 2010 .

[61]  Hiroto Sekiguchi,et al.  Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate , 2010 .

[62]  Y. Arakawa,et al.  Selective-area growth of thin GaN nanowires by MOCVD , 2012 .

[63]  Morteza Monavarian,et al.  Electrically Injected GHz-Class GaN/InGaN Core–Shell Nanowire-Based μLEDs: Carrier Dynamics and Nanoscale Homogeneity , 2019, ACS Photonics.

[64]  Cheolsoo Sone,et al.  Visible‐Color‐Tunable Light‐Emitting Diodes , 2011, Advanced materials.

[65]  A. Waag,et al.  Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core–Shell LED Structures , 2013 .

[66]  Zetian Mi,et al.  Phosphor-Free InGaN/GaN Dot-in-a-Wire White Light-Emitting Diodes on Copper Substrates , 2014, Journal of Electronic Materials.

[67]  Yen-Kuang Kuo,et al.  Numerical Study of Blue InGaN Light-Emitting Diodes With Varied Barrier Thicknesses , 2011, IEEE Photonics Technology Letters.

[68]  D. A. Zakheim,et al.  Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density , 2006 .

[69]  Abdallah Khreishah,et al.  Fabrication of Phosphor-Free III-Nitride Nanowire Light-Emitting Diodes on Metal Substrates for Flexible Photonics , 2017, ACS omega.

[70]  Tao Wang,et al.  Reduced longitudinal optical phonon-exciton interaction in InGaN/GaN nanorod structures , 2012 .

[71]  D. Kim,et al.  High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays , 2004 .

[72]  A. Piancastelli,et al.  Effects of low-power light therapy on wound healing: LASER x LED* , 2014, Anais brasileiros de dermatologia.

[73]  Zetian Mi,et al.  On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping , 2013 .

[74]  Y. W. Wang,et al.  Micro-Raman investigation of GaN nanowires prepared by direct reaction Ga with NH3 , 2001 .

[75]  Zetian Mi,et al.  High efficiency, full-color AlInGaN quaternary nanowire light emitting diodes with spontaneous core-shell structures on Si , 2015 .

[76]  K. Kishino,et al.  InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate , 2004 .

[77]  George T. Wang,et al.  Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays. , 2011, Optics express.

[78]  Ji Hye Oh,et al.  Healthy, natural, efficient and tunable lighting: four-package white LEDs for optimizing the circadian effect, color quality and vision performance , 2014 .

[79]  Jens Bauer,et al.  VLS growth of GaN nanowires on various substrates , 2008 .

[80]  Bo E. Sernelius,et al.  Defect related issues in the current roll-off in InGaN based light emitting diodes , 2007 .

[81]  S. Hersee,et al.  The controlled growth of GaN nanowires. , 2006, Nano letters.

[82]  Xin Wang,et al.  Fabrication of GaN nanowire arrays by confined epitaxy , 2006 .

[83]  Weilong Chen,et al.  Photoluminescence enhancement of (NH4)2Sx passivated InP surface by rapid thermal annealing , 1996 .

[84]  Zhihua Cai,et al.  Synthesis and Properties of High-Quality InN Nanowires and Nanonetworks , 2008 .

[85]  Zetian Mi,et al.  Color-tunable, phosphor-free InGaN nanowire light-emitting diode arrays monolithically integrated on silicon. , 2014, Optics express.

[86]  P. Bhattacharya,et al.  Auger recombination in III-nitride nanowires and its effect on nanowire light-emitting diode characteristics. , 2011, Nano letters.

[87]  Xin Huang,et al.  Tuning carrier lifetime in InGaN/GaN LEDs via strain compensation for high-speed visible light communication , 2016, Scientific Reports.

[88]  Chao Liu,et al.  Ultrafast, superhigh gain visible-blind UV detector and optical logic gates based on nonpolar a-axial GaN nanowire. , 2014, Nanoscale.

[89]  C. Weisbuch,et al.  Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop. , 2013, Physical review letters.

[90]  Z. Mi,et al.  Monolithically Integrated Metal/Semiconductor Tunnel Junction Nanowire Light-Emitting Diodes. , 2016, Nano letters (Print).

[91]  Kai Cui,et al.  Temperature-dependent nonradiative recombination processes in GaN-based nanowire white-light-emitting diodes on silicon , 2012, Nanotechnology.

[92]  P. Bhattacharya,et al.  Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy. , 2010, Nano letters.

[93]  Meng Zhang,et al.  Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes , 2009 .

[94]  Joe Evans,et al.  Alternating Current , 2017 .

[95]  Hadis Morkoç,et al.  Ballistic transport in InGaN-based LEDs: impact on efficiency , 2011 .

[96]  Mark A. Reed,et al.  Electrical characterization of single GaN nanowires , 2005 .

[97]  Florian Siegert,et al.  Epitaxial core – shell and core – multishell nanowire heterostructures , 2002 .

[98]  JianJang Huang,et al.  InGaN–GaN Nanorod Light Emitting Arrays Fabricated by Silica Nanomasks , 2008, IEEE Journal of Quantum Electronics.

[99]  Rami T. Elafandy,et al.  Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics. , 2016, Nano letters.

[100]  Jian Jang Huang,et al.  On the Efficiency Decrease of the GaN Light-Emitting Nanorod Arrays , 2013, IEEE Journal of Quantum Electronics.

[101]  A. Waag,et al.  The nanorod approach: GaN NanoLEDs for solid state lighting , 2011 .

[102]  Z. Mi,et al.  Alternating-Current InGaN/GaN Tunnel Junction Nanowire White-Light Emitting Diodes. , 2015, Nano letters.

[103]  D. Kalita,et al.  Strong suppression of internal electric field in GaN/AlGaN multi-layer quantum dots in nanowires , 2011 .

[104]  F. Julien,et al.  InGaN/GaN core-shell single nanowire light emitting diodes with graphene-based p-contact. , 2014, Nano letters.

[105]  M. Craford,et al.  Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting , 2007, Journal of Display Technology.

[106]  Hadis Morkoç,et al.  Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them , 2010 .

[107]  A. A. Talin,et al.  GaN nanowire surface state observed using deep level optical spectroscopy , 2010 .

[108]  S. Aloni,et al.  Complete composition tunability of InGaN nanowires using a combinatorial approach. , 2007, Nature materials.

[109]  Michael N. Fairchild,et al.  GaN nanowire light emitting diodes based on templated and scalable nanowire growth , 2009 .

[110]  Debdeep Jena,et al.  Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures , 2010, Science.

[111]  Hiroto Sekiguchi,et al.  Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns , 2008 .

[112]  Madhu Menon,et al.  Nanowires as semi-rigid substrates for growth of thick, In(x)Ga(1-x)N (x > 0.4) epi-layers without phase segregation for photoelectrochemical water splitting. , 2012, Nanoscale.

[113]  Z. S. Liu,et al.  The investigation on carrier distribution in InGaN/GaN multiple quantum well layers , 2011 .

[114]  Chao Shen,et al.  Facile Formation of High-Quality InGaN/GaN Quantum-Disks-in-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters. , 2016, Nano letters.

[115]  Katsumi Kishino,et al.  Photoluminescence properties of selectively grown InN microcrystals , 2012 .

[116]  Stephen J. Pearton,et al.  Electrical transport properties of single GaN and InN nanowires , 2006 .

[117]  Lawrence H. Robins,et al.  Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy , 2008 .

[118]  Hyeyoung Ahn,et al.  Strong green photoluminescence from InxGa1-xN/GaN nanorod arrays. , 2009, Optics express.

[119]  V. Narayanan,et al.  Origins of threading dislocations in GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition , 2001 .

[120]  Nan Liu,et al.  Development of a portable hyperspectral imaging system for monitoring the efficacy of sanitation procedures in food processing facilities , 2013 .

[121]  Hadis Morkoç,et al.  On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers , 2008 .

[122]  Alexandros Georgakilas,et al.  Spontaneous growth of III-nitride nanowires on Si by molecular beam epitaxy , 2009 .

[123]  Christian Sommer,et al.  White light quality of phosphor converted light-emitting diodes: A phosphor materials perspective of view , 2012 .

[124]  Hao-Chung Kuo,et al.  Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer. , 2014, Optics express.