Al compositional inhomogeneity of AlGaN epilayer with a high Al composition grown by metal–organic chemical vapour deposition
暂无分享,去创建一个
[1] C. Shih,et al. Direct evidence of compositional pulling effect in AlxGa1−xN epilayers , 2006 .
[2] K. Ploog,et al. Lateral phase separation in AlGaN grown on GaN with a high-temperature AlN interlayer , 2005 .
[3] M. Asif Khan,et al. Improved performance of 325-nm emission AlGaN ultraviolet light-emitting diodes , 2003 .
[4] W. Liao,et al. Observation of compositional pulling phenomenon in AlxGa1−xN (0.4 , 2003 .
[5] M. Asif Khan,et al. AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire , 2002 .
[6] S. Denbaars,et al. Indium surfactant assisted growth of AlN/GaN heterostructures by metal-organic chemical vapor deposition , 2001 .
[7] Yu Wang,et al. AlGaN/GaN high electron mobility transistors on Si(111) substrates , 2001 .
[8] Joe C. Campbell,et al. Back illuminated AlGaN solar-blind photodetectors , 2000 .
[9] Satoshi Kurai,et al. Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN , 1998 .
[10] R. Davis,et al. The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization , 1997 .