Nonlocal Manipulation of Dimer Motion at Ge(001) Clean Surface via Hot Carriers in Surface States

Nonlocal one-dimensional motions of a topological defect are induced by electron tunneling through the dangling-bond states on the clean Ge(001) surface using scanning tunneling microscopy below 80 K. The direction of the motion depends both on the energy of the carriers in the surface state and on the distance between the defect and the tunneling point. The results are interpreted using an electronic excitation model by hot carriers injected into the surface states. The critical distance of the motion is anisotropic and consistent with the band structure of the surface states.

[1]  Y. Naitoh,et al.  Correlated motion of small Ag clusters and Ge dimer-buckling on Ge(001) , 2002 .

[2]  Karlsson,et al.  Electronic structure of clean and hydrogen-chemisorbed Ge(001) surfaces studied by photoelectron spectroscopy. , 1994, Physical review. B, Condensed matter.

[3]  L. Kipp,et al.  An intrinsic metallic surface state on Ge(001) 2 × 1 , 1995 .

[4]  S. Koch,et al.  Five-wave-mixing spectroscopy of ultrafast electron dynamics at a si(001) surface. , 2004, Physical review letters.

[5]  Hendrik Hölscher,et al.  Calculation of the frequency shift in dynamic force microscopy , 1999 .

[6]  F. Bechstedt,et al.  Energetics of Si(001) surfaces exposed to electric fields and charge injection. , 2004, Physical review letters.

[7]  H. Kawai,et al.  Vibration of Dimer on Ge(001) Surface Excited Coherently by Tunneling Current of Scanning Tunneling Microscopy , 2004 .

[8]  John R. Tucker,et al.  Nanoscale patterning and oxidation of H‐passivated Si(100)‐2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope , 1994 .

[9]  P. Krüger,et al.  Surface electronic structure of Ge(001)2 × 1: experiment and theory , 1990 .

[10]  M. Tsukada,et al.  Time-Fluctuation of the Dimer Structure on a Ge(001) Surface Studied by a Monte Carlo Simulation and a First-Principles Calculation , 2002 .

[11]  K. Nakatsuji,et al.  Reversible local-modification of surface structure on clean Ge(0 0 1) by scanning tunneling microscopy below 80 K , 2004 .

[12]  J. Nakamura,et al.  Energy barrier for dimer flipping at the Si ( 001 ) − ( 2 × 1 ) surface in external electric fields , 2005 .

[13]  Krueger,et al.  Quasiparticle band structures of clean, hydrogen-, and sulfur-terminated Ge(001) surfaces. , 1996, Physical review. B, Condensed matter.

[14]  Local and Reversible Change of the Reconstruction on Ge(001) Surface between c(4×2) and p(2×2) by Scanning Tunneling Microscopy , 2003, cond-mat/0303522.

[15]  Yoshiaki Nakamura,et al.  Nanoscale imaging of electronic surface transport probed by atom movements induced by scanning tunneling microscope current. , 2002, Physical review letters.

[16]  E. Graugnard,et al.  Tunneling electron induced bromine hopping on Si(100)-(2 x 1). , 2002, Physical review letters.

[17]  B. Lundqvist,et al.  Single-Molecule Dissociation by Tunneling Electrons , 1997 .

[18]  D. Eigler,et al.  An atomic switch realized with the scanning tunnelling microscope , 1991, Nature.

[19]  M. Rohlfing,et al.  Electronic structure and electron dynamics at Si(100) , 2005 .