Electrical characterization of defects introduced in n-GaAs by alpha and beta irradiation from radionuclides

We investigated defect production in n-type GaAs with two different free-carrier densities (4×1014 and 1×1016/cm3) by using particles liberated from radionuclides. 90Sr and 241Am were employed as beta and alpha sources, respectively. The results obtained for electron irradiation showed that the same set of primary defects can be produced by beta irradiation from the Sr source as by electrons produced in an accelerator. Similarly, the defects produced by alpha irradiation from the Am source closely resemble those introduced by alpha irradiation in a Van de Graaff accelerator. It was found that the relative concentrations of the primary defects in electron-irradiated GaAs are different to those in alpha-particle irradiated GaAs. Further, for the first time, an alpha irradiation induced defect which seems to be related to the doping concentration was observed in the 1016/cm3 Si doped GaAs. It is concluded that the use of radionuclides is an inexpensive and convenient method to introduce and to study radiation induced defects in semiconductors.

[1]  F. Auret,et al.  Influence of the electron beam evaporation rate of Pt and the semiconductor carrier density on the characteristics of Pt/n‐GaAs Schottky contacts , 1992 .

[2]  D. V. Lang,et al.  Fast capacitance transient appartus: Application to ZnO and O centers in GaP p‐n junctions , 1974 .

[3]  Bourgoin,et al.  Behavior of electron-irradiation-induced defects in GaAs. , 1990, Physical review. B, Condensed matter.

[4]  Bourgoin,et al.  Irradiation-induced defects in p-type GaAs. , 1986, Physical review. B, Condensed matter.

[5]  L. Slifkin,et al.  Point Defects in Solids , 1972 .

[6]  M. Schulz,et al.  Double correlation technique (DDLTS) for the analysis of deep level profiles in semiconductors , 1977 .

[7]  W. Tiller,et al.  The evolution of crystal shape: A computer model , 1967 .

[8]  Miyoko O. Watanabe,et al.  On the determination of the spatial distribution of deep centers in semiconducting thin films from capacitance transient spectroscopy , 1982 .

[9]  S. Courtney,et al.  A study of the distribution of hydrogen and strain in proton-bombarded liquid-encapsulated Czochralski-grown GaAs by double-crystal x-ray diffraction and secondary ion mass spectrometry☆ , 1989 .

[10]  David C. Look,et al.  Defect Models in Electron-Irradiated N-Type GaAs , 1992 .

[11]  J. Bourgoin,et al.  Irradiation-induced defects in GaAs , 1985 .

[12]  J. Bourgoin,et al.  Anisotropic-Defect Introduction in GaAs by Electron Irradiation , 1981 .

[13]  F. Auret,et al.  Single scan defect identification by deep level transient spectroscopy using a two‐phase lock‐in amplifier (IQ‐DLTS) , 1988 .

[14]  H. C. Snyman,et al.  A DLTS analysis of electron and hole traps in proton implanted VPE grown n-GaAs using schottky barrier diodes , 1988 .

[15]  J. Cleland,et al.  Transmutation-Produced Germanium Semiconductors , 1950 .