BSIM6: Analog and RF Compact Model for Bulk MOSFET

BSIM6 is the latest industry-standard bulk MOSFET model from the BSIM group developed specially for accurate analog and RF circuit designs. The popular real-device effects have been brought from BSIM4. The model shows excellent source-drain symmetry during both dc and small signal analysis, thus giving excellent results during analog and RF circuit simulations, e.g., harmonic balance simulation. The model is fully scalable with geometry, biases, and temperature. The model has a physical charge-based capacitance model including polydepletion and quantum-mechanical effect thereby giving accurate results in small signal and transient simulations. The BSIM6 model has been extensively validated with industry data from 40-nm technology node.

[1]  Carver A. Mead,et al.  A Physical Charge-Controlled Model for MOS Transistors , 1987 .

[2]  Ali M. Niknejad,et al.  BSIM6: Symmetric Bulk MOSFET Model , 2012 .

[3]  C.C. McAndrew,et al.  Validation of MOSFET model Source–Drain Symmetry , 2006, IEEE Transactions on Electron Devices.

[4]  H.J. Mattausch,et al.  HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation , 2006, IEEE Transactions on Electron Devices.

[5]  Ali M. Niknejad,et al.  BSIM compact MOSFET models for SPICE simulation , 2013, Proceedings of the 20th International Conference Mixed Design of Integrated Circuits and Systems - MIXDES 2013.

[6]  Ya-Chin King,et al.  Dc electrical oxide thickness model for quantization of the inversion layer in MOSFETs , 1998 .

[7]  M. C. Jeng,et al.  A physical model for MOSFET output resistance , 1992, 1992 International Technical Digest on Electron Devices Meeting.

[8]  Y. Papananos,et al.  An Adjusted Constant-Current Method to Determine Saturated and Linear Mode Threshold Voltage of MOSFETs , 2011, IEEE Transactions on Electron Devices.

[9]  Y. Chauhan,et al.  Recent enhancements in BSIM6 bulk MOSFET model , 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

[10]  J. Early Effects of Space-Charge Layer Widening in Junction Transistors , 1952, Proceedings of the IRE.

[11]  T.Y. Chan,et al.  The impact of gate-induced drain leakage current on MOSFET scaling , 1987, 1987 International Electron Devices Meeting.

[12]  C. C. McAndrew,et al.  An improved MOSFET model for circuit simulation , 1998 .

[13]  Soo-Young Oh,et al.  Transient analysis of MOS transistors , 1980 .

[14]  G. Gildenblat,et al.  Benchmark Tests for MOSFET Compact Models With Application to the PSP Model , 2009, IEEE Transactions on Electron Devices.

[15]  Christophe Lallement,et al.  Explicit modelling of the double-gate MOSFET with VHDL-AMS , 2006 .

[16]  E. Vittoz,et al.  An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications , 1995 .

[17]  Chenming Hu,et al.  Modeling of pocket implanted MOSFETs for anomalous analog behavior , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

[18]  Y. Tsividis Operation and modeling of the MOS transistor , 1987 .

[19]  Matthias Bucher,et al.  Improved analytical modeling of polysilicon depletion in MOSFETs for circuit simulation , 2000 .

[20]  M.J. Deen,et al.  An effective gate resistance model for CMOS RF and noise modeling , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

[21]  Jin He,et al.  BSIM5: An advanced charge-based MOSFET model for nanoscale VLSI circuit simulation , 2007 .

[22]  Xin Zhang,et al.  A non-iterative physical procedure for RF CMOS compact model extraction using BSIM6 , 2012, Proceedings of the IEEE 2012 Custom Integrated Circuits Conference.

[23]  C. Hu,et al.  Threshold voltage model for deep-submicrometer MOSFETs , 1993 .

[24]  Ping-Keung Ko,et al.  A physics-based MOSFET noise model for circuit simulators , 1990 .

[25]  E. Vittoz,et al.  Charge-Based MOS Transistor Modeling , 2006 .

[26]  Ali M. Niknejad,et al.  BSIM — Industry standard compact MOSFET models , 2012, 2012 Proceedings of the ESSCIRC (ESSCIRC).

[27]  Christian Enz,et al.  Charge-Based MOS Transistor Modeling: The EKV Model for Low-Power and RF IC Design , 2006 .

[28]  Matthias Bucher,et al.  Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model , 2003 .

[29]  Xin Li,et al.  The New CMC Standard Compact MOS Model PSP: Advantages for RF Applications , 2009, IEEE Journal of Solid-State Circuits.