论文信息 - A measurement based distributed low frequency noise HEMT model: application to design of millimeter wave automotive radar chip sets

A measurement based distributed low frequency noise HEMT model: application to design of millimeter wave automotive radar chip sets

A fully measurement based extraction procedure of a distributed low-frequency nonlinear noise model of a PHEMT is proposed. This model describes accurately the distributed nature under the device gate which allows a good noise behavior prediction in nonlinear circuits. It is used to simulate successfully noise characteristics of MMICs for FMCW automotive radar at 77 GHz. The simulated and experimental results on two different source-chips: a VCO and DRO have been compared and we demonstrate the accuracy of the noise model which results in being independent of the application.

[1] Robert Anholt,et al. Electrical and thermal characterization of MESFETs, HEMTs, and HBTs , 1994 .

[2] J. Teyssier,et al. A new nonlinear I(V) model for FET devices including breakdown effects , 1994, IEEE Microwave and Guided Wave Letters.

[3] D. Sodini,et al. A new approach to model d.c. and a.c. characteristics of junction gate field effect transistors , 1981 .

[4] Raymond Quere,et al. An improved CAD oriented FET model for large-signal and noise applications , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).

[5] S. Delage,et al. Microscopic analysis of generation-recombination noise in semiconductors under dc and time-varying electric fields , 2000 .

[6] M. Camiade,et al. Fully MMIC-Based Front End for FMCW Automotive Radar at 77GHz , 2000, 2000 30th European Microwave Conference.

[7] H. Lin,et al. DC and transmission line models for a high electron mobility transistor , 1989 .