3-D electrothermal device/circuit simulation of DC-DC converter module in multi-die IC

Presented work introduces automated interaction of SDevice and HSPICE for fast 3-D electrothermal simulation. The proposed methodology maintains a very high accuracy of the modelled parameters in a wide range of dynamic temperature fluctuations, which brings the thermal simulations much closer to the real state. The designed electrothermal simulation is developed for Synopsys TCAD Sentaurus environment. The main goal is decreasing the simulation time for complex 3-D devices. A DC-DC converter module in a multi-die integrated circuit is used as an example to perform validation of the designed electrothermal simulation. The features and limitations of the method are analyzed and presented.

[1]  A. Chvala,et al.  Power transistor models with temperature dependent parasitic effects for SPICE-like circuit simulation , 2012, 2012 28th International Conference on Microelectronics Proceedings.

[2]  B. Geeraerts,et al.  Electrothermal simulation and design of integrated circuits , 1994, IEEE J. Solid State Circuits.

[3]  Dr. Martin März,et al.  Thermal Modeling of Power-electronic Systems , 2000 .

[4]  Y. Chauhan,et al.  Recent enhancements in BSIM6 bulk MOSFET model , 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

[5]  Andrea Irace,et al.  FEM simulation approach to investigate electro-thermal behavior of power transistors in 3-D , 2013, Microelectron. Reliab..