论文信息 - Auger recombination in intrinsic GaAs

Auger recombination in intrinsic GaAs

The recombination kinetics of the electron‐hole plasma in strongly excited, intrinsic GaAs is investigated at room temperature by time‐resolved photoluminescence using a line‐shape analysis of transient spectra. Special structuring of the samples prevents stimulated emission and diffusion. Population of higher energetic subsidiary conduction‐band valleys must be taken into account for densities ≳1.5×1019 cm−3. A significant influence of Auger recombination is detected for densities ≳2.5×1019 cm−3. The bimolecular recombination coefficient and an effective Auger coefficient are found to be B=(1.7±0.2)×10−10 cm3 s−1 and Ceff=(7±4)×10−30 cm6 s−1, respectively.

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