Circuit-aware device reliability criteria methodology
暂无分享,去创建一个
H.-S. Philip Wong | Lan Wei | Anthony S. Oates | Jason P. Campbell | Kin P. Cheung | Jason T. Ryan | Ricki G. Southwick | John Suehle
[1] Muhammad Ashraful Alam,et al. Reliability- and Process-variation aware design of integrated circuits — A broader perspective , 2008, 2011 International Reliability Physics Symposium.
[2] H.-S. Philip Wong,et al. Performance benchmarks for Si, III–V, TFET, and carbon nanotube FET - re-thinking the technology assessment methodology for complementary logic applications , 2010, 2010 International Electron Devices Meeting.
[3] T. Nigam,et al. Accurate product lifetime predictions based on device-level measurements , 2009, 2009 IEEE International Reliability Physics Symposium.
[4] B. S. Doyle,et al. A lifetime prediction method for hot-carrier degradation in surface-channel p-MOS devices , 1990 .
[5] R. Wong,et al. Impact of NBTI Induced Statistical Variation to SRAM Cell Stability , 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.
[6] Balaji Vaidyanathan,et al. The relationship between transistor-based and circuit-based reliability assessment for digital circuits , 2011, 2011 International Reliability Physics Symposium.
[7] P. Abramowitz,et al. Realistic Projections of Product Fmax Shift and Statistics due to HCI and NBTI , 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
[8] D. Scott,et al. Reliability effects on MOS transistors due to hot-carrier injection , 1985 .
[9] A. Bravaix,et al. Novel hot-carrier AC-DC design guidelines for advanced CMOS nodes , 2008, 2008 IEEE International Reliability Physics Symposium.