BiCMOS integration of high-speed SiGe:C HBTs

We describe the integration of high-speed SiGe:C HBTs with ring oscillator delays of 4.2 ps and f T /f max values of 180/200 GHz in a 0.25 μm CMOS platform. Simple BiCMOS integration is facilitated by an HBT module without deep trench isolation and with low-resistance collectors formed by high-dose ion implantation after shallow trench formation. Excellent static characteristics and high yield are demonstrated.