Performance of lead iodide nuclear radiation detectors with the introduction of rare earth elements
暂无分享,去创建一个
[1] Y. C. Lee,et al. Optical studies of the Holmium-doped InGaAsP epilayers , 2003 .
[2] A. Steckl,et al. Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices , 2002 .
[3] I. Melnyk,et al. Control of parameters of III-V compound microcrystals and epitaxial layers by means of complex doping , 2001 .
[4] N. Veissid,et al. Gap energy studied by optical transmittance in lead iodide monocrystals grown by Bridgman's Method , 1999 .
[5] A. Burger,et al. Characterization of lead iodide for nuclear spectrometers , 1996 .
[6] D. Vignaud,et al. PHOTOLUMINESCENCE AND DOUBLE-CRYSTAL X-RAY STUDY OF InGaAs/InP: EFFECT OF RARE EARTH (DYSPROSIUM) ADDITION DURING LIQUID PHASE EPITAXIAL GROWTH* , 1995 .
[7] J. Novák,et al. Gettering properties of PrO2 in In0.53Ga0.47As LPE growth , 1991 .
[8] M. Salvi,et al. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials , 1989 .
[9] D. L. Partin. Lead telluride doped with rare‐earth elements , 1985 .