Functional Non‐Volatile Memory Devices: From Fundamentals to Photo‐Tunable Properties

[1]  Nripan Mathews,et al.  Towards printable organic thin film transistor based flash memory devices , 2011 .

[2]  Benjamin C. K. Tee,et al.  Highly sensitive flexible pressure sensors with microstructured rubber dielectric layers. , 2010, Nature materials.

[3]  Wei Chen,et al.  Room temperature magnetic graphene oxide-iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons. , 2014, Small.

[4]  Tao Chen,et al.  Fluorescent Hydrogel‐Coated Paper/Textile as Flexible Chemosensor for Visual and Wearable Mercury(II) Detection , 2018, Advanced Materials Technologies.

[5]  F. Zhuge,et al.  Mechanism of nonvolatile resistive switching in graphene oxide thin films , 2011 .

[6]  Yuchao Yang,et al.  Probing nanoscale oxygen ion motion in memristive systems , 2017, Nature Communications.

[7]  M. Hersam,et al.  Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide , 2018, Nature.

[8]  Qi Liu,et al.  Eliminating Negative‐SET Behavior by Suppressing Nanofilament Overgrowth in Cation‐Based Memory , 2016, Advanced materials.

[9]  Chi Jung Kang,et al.  Resistive Switching Behavior in Organic–Inorganic Hybrid CH3NH3PbI3−xClx Perovskite for Resistive Random Access Memory Devices , 2015, Advanced materials.

[10]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[11]  Su‐Ting Han,et al.  Biodegradable skin-inspired nonvolatile resistive switching memory based on gold nanoparticles embedded alkali lignin , 2018, Organic Electronics.

[12]  L. Kish.  End of Moore's law: thermal (noise) death of integration in micro and nano electronics , 2002 .

[13]  A. Kis,et al.  Nonvolatile memory cells based on MoS2/graphene heterostructures. , 2013, ACS nano.

[14]  Byung Chul Jang,et al.  Multilevel resistive switching nonvolatile memory based on MoS2 nanosheet-embedded graphene oxide , 2016 .

[15]  Ming Liu,et al.  Thermal effect on endurance performance of 3-dimensional RRAM crossbar array* , 2016 .

[16]  N. Zhang,et al.  Near-Infrared to Visible Organic Upconversion Devices Based on Organic Light-Emitting Field Effect Transistors. , 2017, ACS applied materials & interfaces.

[17]  D. D. de Leeuw,et al.  Interfacial conduction in organic ferroelectric memory diodes , 2018, Applied Physics Letters.

[18]  W. Hu,et al.  A Ferroelectric/Electrochemical Modulated Organic Synapse for Ultraflexible, Artificial Visual‐Perception System , 2018, Advanced materials.

[19]  Yuchao Yang,et al.  Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics , 2018, Advanced materials.

[20]  Al2O3 thin film multilayer structure for application in RRAM devices , 2018, Solid-State Electronics.

[21]  H.-S. Philip Wong,et al.  Face classification using electronic synapses , 2017, Nature Communications.

[22]  T. Lei,et al.  PolySi-SiO2-ZrO2-SiO2-Si Flash Memory Incorporating a Sol-Gel-Derived ZrO2 Charge Trapping Layer , 2006 .

[23]  Hua Zhang,et al.  Two-Dimensional Metal Nanomaterials: Synthesis, Properties, and Applications. , 2018, Chemical reviews.

[24]  Koon Gee Neoh,et al.  Polymer electronic memories: Materials, devices and mechanisms , 2008 .

[25]  K. Choi,et al.  2D nanocomposite of hexagonal boron nitride nanoflakes and molybdenum disulfide quantum dots applied as the functional layer of all-printed flexible memory device , 2018, Materials Research Bulletin.

[26]  Stefan Hecht,et al.  Photoswitches: From Molecules to Materials , 2010, Advanced materials.

[27]  H. Hwang,et al.  Three‐Dimensional Integration of Organic Resistive Memory Devices , 2010, Advanced materials.

[28]  T. Taniguchi,et al.  Photo-induced Doping in Graphene/Boron Nitride Heterostructures , 2014, 1402.4563.

[29]  Jan van den Hurk,et al.  Nanobatteries in redox-based resistive switches require extension of memristor theory , 2013, Nature Communications.

[30]  Teofil Jesionowski,et al.  Zinc Oxide—From Synthesis to Application: A Review , 2014, Materials.

[31]  Yichun Liu,et al.  Reversible alternation between bipolar and unipolar resistive switching in Ag/MoS2/Au structure for multilevel flexible memory , 2018 .

[32]  Yang Yang,et al.  Organic Donor–Acceptor System Exhibiting Electrical Bistability for Use in Memory Devices , 2005, Advanced materials.

[33]  Anderson Janotti,et al.  Fundamentals of zinc oxide as a semiconductor , 2009 .

[34]  Youwei Du,et al.  Flexible, multilevel, and low-operating-voltage resistive memory based on MoS2–rGO hybrid , 2019, Applied Surface Science.

[35]  Qiang Zhao,et al.  Polymer‐Based Resistive Memory Materials and Devices , 2014, Advanced materials.

[36]  Feng Wang,et al.  An upconverted photonic nonvolatile memory , 2014, Nature Communications.

[37]  N. Ono,et al.  Solution-processible organic semiconductor for transistor applications: Tetrabenzoporphyrin , 2004 .

[38]  Ru Huang,et al.  Light‐Tunable Nonvolatile Memory Characteristics in Photochromic RRAM , 2017 .

[39]  Guofa Cai,et al.  Hexagonal Boron Nitride Thin Film for Flexible Resistive Memory Applications , 2016 .

[40]  John F. Muth,et al.  Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric , 2009 .

[41]  A J Heeger,et al.  Efficiency enhancement in low-bandgap polymer solar cells by processing with alkane dithiols. , 2007, Nature materials.

[42]  J. Ouyang,et al.  Electrical Switching and Bistability in Organic/Polymeric Thin Films and Memory Devices , 2006 .

[43]  Sumbul Huseyin Ekin,et al.  All-magnetic magnetoresistive random access memory based on four terminal mCell device , 2015 .

[44]  Mark S. Lundstrom,et al.  APPLIED PHYSICS: Enhanced: Moore's Law Forever? , 2003 .

[45]  Feng Miao,et al.  Negative Photoconductance in van der Waals Heterostructure-Based Floating Gate Phototransistor. , 2018, ACS nano.

[46]  J. Tominaga,et al.  Resistive switching mechanism of GeTe-Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states. , 2017, Nanoscale.

[47]  Hybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in Air , 2017, Scientific Reports.

[48]  H. Jeong,et al.  Direct Observation of Conducting Nanofilaments in Graphene‐Oxide‐Resistive Switching Memory , 2015 .

[49]  F. Zhuge,et al.  Ultrasensitive Memristive Synapses Based on Lightly Oxidized Sulfide Films , 2017, Advanced materials.

[50]  Su‐Ting Han,et al.  Emerging perovskite materials for high density data storage and artificial synapses , 2018 .

[51]  D. Stewart,et al.  Using Dopants to Tune Oxygen Vacancy Formation in Transition Metal Oxide Resistive Memory. , 2017, ACS applied materials & interfaces.

[52]  Thomas N. Jackson,et al.  Pentacene-based organic thin-film transistors , 1997 .

[53]  Tsu-Jae King,et al.  Silicon-nitride as a tunnel dielectric for improved SONOS-type flash memory , 2003, IEEE Electron Device Letters.

[54]  R. Dittmann,et al.  Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.

[55]  A. Pradhan,et al.  Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device application , 2016, Scientific Reports.

[56]  Su‐Ting Han,et al.  Photonic Synapses Based on Inorganic Perovskite Quantum Dots for Neuromorphic Computing , 2018, Advanced materials.

[57]  Miao Zhou,et al.  Flexible All-Inorganic Perovskite CsPbBr3 Nonvolatile Memory Device. , 2017, ACS applied materials & interfaces.

[58]  T. Chan,et al.  A true single-transistor oxide-nitride-oxide EEPROM device , 1987, IEEE Electron Device Letters.

[59]  Bin Zhang,et al.  Graphene and its derivatives: switching ON and OFF. , 2012, Chemical Society reviews.

[60]  H. Hwang,et al.  Improved metal–oxide–nitride–oxide–silicon-type flash device with high-k dielectrics for blocking layer , 2003 .

[61]  Qingfeng Xu,et al.  Pseudohalide-Induced 2D (CH3 NH3 )2 PbI2 (SCN)2 Perovskite for Ternary Resistive Memory with High Performance. , 2018, Small.

[62]  R. H. Kim,et al.  One‐Step All‐Solution‐Based Au–GO Core–Shell Nanosphere Active Layers in Nonvolatile ReRAM Devices , 2017 .

[63]  S. Bauer,et al.  Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays , 2009, Science.

[64]  H. Zeng,et al.  Monolayer and Few‐Layer All‐Inorganic Perovskites as a New Family of Two‐Dimensional Semiconductors for Printable Optoelectronic Devices , 2016, Advanced materials.

[65]  Benjamin C. K. Tee,et al.  Stretchable Organic Solar Cells , 2011, Advanced materials.

[66]  Yi Yang,et al.  Graphene Dynamic Synapse with Modulatable Plasticity. , 2015, Nano letters.

[67]  N. Xu,et al.  Resistive Switching in $\hbox{CeO}_{x}$ Films for Nonvolatile Memory Application , 2009, IEEE Electron Device Letters.

[68]  Wei Lu,et al.  Real-Time Observation of the Electrode-Size-Dependent Evolution Dynamics of the Conducting Filaments in a SiO2 Layer. , 2017, ACS nano.

[69]  Piero Olivo,et al.  Flash memory cells-an overview , 1997, Proc. IEEE.

[70]  V. Shutthanandan,et al.  Characterization of amorphous zinc tin oxide semiconductors , 2012 .

[71]  Amritesh Rai,et al.  Characteristics and mechanism study of cerium oxide based random access memories , 2015 .

[72]  Jang-Sik Lee,et al.  Flexible organic transistor memory devices. , 2010, Nano letters.

[73]  Huaiwu Zhang,et al.  Ultra-high ON/OFF ratio and multi-storage on NiO resistive switching device , 2016, Journal of Materials Science.

[74]  Resistive Switching Characteristics of Al2O3 Film for Transparent Nonvolatile Memory , 2017, IEEE Transactions on Nanotechnology.

[75]  Wei D. Lu,et al.  Nanoscale electrochemistry using dielectric thin films as solid electrolytes. , 2016, Nanoscale.

[76]  A. Roy,et al.  Stable charge retention in graphene-MoS 2 assemblies for resistive switching effect in ultra-thin super-flexible organic memory devices , 2018, Organic Electronics.

[77]  A. Dodabalapur,et al.  A soluble and air-stable organic semiconductor with high electron mobility , 2000, Nature.

[78]  M. Lankhorst,et al.  Low-cost and nanoscale non-volatile memory concept for future silicon chips , 2005, Nature materials.

[79]  Sung-Yool Choi,et al.  A low-temperature-grown TiO2-based device for the flexible stacked RRAM application , 2010, Nanotechnology.

[80]  Liming Ding,et al.  A lead-free two-dimensional perovskite for a high-performance flexible photoconductor and a light-stimulated synaptic device. , 2018, Nanoscale.

[81]  Lin Gu,et al.  Design of a Photoactive Hybrid Bilayer Dielectric for Flexible Nonvolatile Organic Memory Transistors. , 2016, ACS nano.

[82]  T. Chikyow,et al.  Optically and electrically driven organic thin film transistors with diarylethene photochromic channel layers. , 2013, ACS applied materials & interfaces.

[83]  Xike Gao,et al.  Photoresponsive organic field-effect transistors involving photochromic molecules , 2016 .

[84]  Jang‐Sik Lee,et al.  Flexible Hybrid Organic-Inorganic Perovskite Memory. , 2016, ACS nano.

[85]  Tae Whan Kim,et al.  Resistive switching memory based on organic/inorganic hybrid perovskite materials , 2016 .

[86]  Yang Hui Liu,et al.  Freestanding Artificial Synapses Based on Laterally Proton‐Coupled Transistors on Chitosan Membranes , 2015, Advanced materials.

[87]  Su‐Ting Han,et al.  Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage. , 2016, Small.

[88]  Organic field-effect transistor nonvolatile memories based on hybrid nano-floating-gate , 2013 .

[89]  Peng Zhou,et al.  Independent Band Modulation in 2D van der Waals Heterostructures via a Novel Device Architecture , 2018, Advanced science.

[90]  Giuseppe Iannaccone,et al.  Electronics based on two-dimensional materials. , 2014, Nature nanotechnology.

[91]  N. E. Coates,et al.  Efficient Tandem Polymer Solar Cells Fabricated by All-Solution Processing , 2007, Science.

[92]  Qi Liu,et al.  Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects , 2018, Advanced materials.

[93]  Yiwei Liu,et al.  Observation of Conductance Quantization in Oxide‐Based Resistive Switching Memory , 2012, Advanced materials.

[94]  Jon-Paul Maria,et al.  Alternative dielectrics to silicon dioxide for memory and logic devices , 2000, Nature.

[95]  A. Jen,et al.  Effects of formamidinium and bromide ion substitution in methylammonium lead triiodide toward high-performance perovskite solar cells , 2016 .

[96]  Subhasish Mitra,et al.  Three-dimensional integration of nanotechnologies for computing and data storage on a single chip , 2017, Nature.

[97]  Qiyuan He,et al.  Memory devices using a mixture of MoS₂ and graphene oxide as the active layer. , 2013, Small.

[98]  Ye Zhou,et al.  Localized Surface Plasmon Resonance-Mediated Charge Trapping/Detrapping for Core-Shell Nanorod-Based Optical Memory Cells. , 2017, ACS applied materials & interfaces.

[99]  Chunsen Liu,et al.  A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications , 2018, Nature Nanotechnology.

[100]  Klaus Meerholz,et al.  Photochromic Transduction Layers in Organic Memory Elements , 2013, Advanced materials.

[101]  Qi Liu,et al.  A novel method of identifying the carrier transport path in metal oxide resistive random access memory , 2015 .

[102]  Zhenan Bao,et al.  Organic Semiconductor Growth and Morphology Considerations for Organic Thin‐Film Transistors , 2010, Advanced materials.

[103]  Qing Wan,et al.  Proton‐Conducting Graphene Oxide‐Coupled Neuron Transistors for Brain‐Inspired Cognitive Systems , 2015, Advanced materials.

[104]  Emanuele Orgiu,et al.  25th Anniversary Article: Organic Electronics Marries Photochromism: Generation of Multifunctional Interfaces, Materials, and Devices , 2014, Advanced materials.

[105]  D. Ielmini,et al.  Logic Computing with Stateful Neural Networks of Resistive Switches , 2018, Advanced materials.

[106]  Daihua Zhang,et al.  Transparent, conductive, and flexible carbon nanotube films and their application in organic light-emitting diodes. , 2006 .

[107]  Qing Wan,et al.  Artificial synapse network on inorganic proton conductor for neuromorphic systems. , 2014, Nature communications.

[108]  M. K. Hota,et al.  Transparent Flash Memory Using Single Ta2O5 Layer for Both Charge-Trapping and Tunneling Dielectrics. , 2017, ACS applied materials & interfaces.

[109]  Heinz-Georg Nothofer,et al.  Improving the performance of doped π-conjugated polymers for use in organic light-emitting diodes , 2000, Nature.

[110]  Yan Wang,et al.  Infrared‐Sensitive Memory Based on Direct‐Grown MoS2–Upconversion‐Nanoparticle Heterostructure , 2018, Advanced materials.

[111]  Dmitri B Strukov,et al.  Flexible three-dimensional artificial synapse networks with correlated learning and trainable memory capability , 2017, Nature Communications.

[112]  Jung Min Lee,et al.  Synaptic Barristor Based on Phase‐Engineered 2D Heterostructures , 2018, Advanced materials.

[113]  S. Kim,et al.  Analysis on switching mechanism of graphene oxide resistive memory device , 2011 .

[114]  D. Frohman-Bentchkowsky.  Memory Behavior in a Floating-Gate Avalanche-Injection MOS (famos) Structure , 1971 .

[115]  C. Hu,et al.  Bistable Resistive Switching in Al2O3 Memory Thin Films , 2007 .

[116]  Lifeng Liu,et al.  Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by In Situ TEM Studies , 2017, Advanced materials.

[117]  Kezhi Zheng,et al.  Rewritable Optical Memory Through High‐Registry Orthogonal Upconversion , 2018, Advanced materials.

[118]  Ming Liu,et al.  Light-Gated Memristor with Integrated Logic and Memory Functions. , 2017, ACS nano.

[119]  Writam Banerjee,et al.  Transparent and flexible resistive switching memory devices with a very high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix , 2013, Nanotechnology.

[120]  Ute Zschieschang,et al.  High-mobility polymer gate dielectric pentacene thin film transistors , 2002 .

[121]  Xiaolin Xie,et al.  A Centimeter‐Scale Inorganic Nanoparticle Superlattice Monolayer with Non‐Close‐Packing and its High Performance in Memory Devices , 2018, Advanced materials.

[122]  Shimeng Yu,et al.  A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM , 2010, IEEE Electron Device Letters.

[123]  Hua Zhang,et al.  Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials. , 2015, Chemical Society reviews.

[124]  Nathan Youngblood,et al.  Device‐Level Photonic Memories and Logic Applications Using Phase‐Change Materials , 2018, Advanced materials.

[125]  Guochun Yang,et al.  Photocatalytic Reduction of Graphene Oxide-TiO2 Nanocomposites for Improving Resistive-Switching Memory Behaviors. , 2018, Small.

[126]  Qi Liu,et al.  Carrier-transport-path-induced switching parameter fluctuation in oxide-based resistive switching memory , 2015 .

[127]  Jang-Sik Lee,et al.  Progress in non-volatile memory devices based on nanostructured materials and nanofabrication , 2011 .

[128]  Youngjune Park,et al.  Artificial Synapses with Short- and Long-Term Memory for Spiking Neural Networks Based on Renewable Materials. , 2017, ACS nano.

[129]  T. Jackson,et al.  Stacked pentacene layer organic thin-film transistors with improved characteristics , 1997, IEEE Electron Device Letters.

[130]  W. Hu,et al.  Organic Ferroelectric‐Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half‐Selection Problem , 2017, Advanced materials.

[131]  Yan Wang,et al.  Biological Spiking Synapse Constructed from Solution Processed Bimetal Core-Shell Nanoparticle Based Composites. , 2018, Small.

[132]  Hisashi Shima,et al.  Resistive Random Access Memory (ReRAM) Based on Metal Oxides , 2010, Proceedings of the IEEE.

[133]  Taeghwan Hyeon,et al.  Ultra‐Wideband Multi‐Dye‐Sensitized Upconverting Nanoparticles for Information Security Application , 2017, Advanced materials.

[134]  R. Kumar,et al.  Quadrupolar (A-π-D-π-A) Tetra-aryl 1,4-Dihydropyrrolo[3,2-b]pyrroles as Single Molecular Resistive Memory Devices: Substituent Triggered Amphoteric Redox Performance and Electrical Bistability , 2016 .

[135]  Pooi See Lee,et al.  Optically readout write once read many memory with single active organic layer , 2016 .

[136]  B. Cho,et al.  Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures , 2011 .

[137]  Zhiyuan Zeng,et al.  Metal dichalcogenide nanosheets: preparation, properties and applications. , 2013, Chemical Society reviews.

[138]  Yang Yang,et al.  Polyaniline nanofiber/gold nanoparticle nonvolatile memory. , 2005, Nano letters.

[139]  H. Fukidome,et al.  Fabrication of multi-layer Bi2Se3 devices and observation of anomalous electrical transport behaviors , 2017 .

[140]  Uwe Pischel,et al.  Molecules with a sense of logic: a progress report. , 2015, Chemical Society reviews.

[141]  Hyungduk Ko,et al.  The formation of a functional pentacene/CH3NH3PbI3-xClx perovskite interface: optical gating and field-induced charge retention. , 2018, Nanoscale.

[142]  Yi Li,et al.  Nonvolatile reconfigurable sequential logic in a HfO2 resistive random access memory array. , 2017, Nanoscale.

[143]  Jang‐Sik Lee,et al.  Flexible resistive switching memory with a Ni/CuOx/Ni structure using an electrochemical deposition process , 2016, Nanotechnology.

[144]  Chien-Chung Shih,et al.  Influence of polymeric electrets on the performance of derived hybrid perovskite-based photo-memory devices. , 2018, Nanoscale.

[145]  Barry P Rand,et al.  Extremely Low Operating Current Resistive Memory Based on Exfoliated 2D Perovskite Single Crystals for Neuromorphic Computing. , 2017, ACS nano.

[146]  Wei D. Lu,et al.  On‐Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics , 2018, Advanced materials.

[147]  Hok-Lai Wong,et al.  Switching of Resistive Memory Behavior from Binary to Ternary Logic via Alteration of Substituent Positioning on the Subphthalocyanine Core. , 2017, Journal of the American Chemical Society.

[148]  Lifeng Liu,et al.  Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large‐Scale Circuits , 2016, Advanced materials.

[149]  Mohammad Yusuf Mulla,et al.  Electrolyte‐Gated Organic Field‐Effect Transistor Sensors Based on Supported Biotinylated Phospholipid Bilayer , 2013, Advanced materials.

[150]  Guangdong Zhou,et al.  Mechanism for bipolar resistive switching memory behaviors of a self-assembled three-dimensional MoS2 microsphere composed active layer , 2017 .

[151]  Su‐Ting Han,et al.  Phototunable Biomemory Based on Light‐Mediated Charge Trap , 2018, Advanced science.

[152]  G. Landi,et al.  Evidence of Bipolar Resistive Switching Memory in Perovskite Solar Cell , 2018, IEEE Journal of the Electron Devices Society.

[153]  Su‐Ting Han,et al.  Low voltage flexible nonvolatile memory with gold nanoparticles embedded in poly(methyl methacrylate) , 2012, Nanotechnology.

[154]  Wenjun Zhang,et al.  Layer‐by‐Layer‐Assembled Reduced Graphene Oxide/Gold Nanoparticle Hybrid Double‐Floating‐Gate Structure for Low‐Voltage Flexible Flash Memory , 2013, Advanced materials.

[155]  Yu-Cheng Chiu,et al.  Nonvolatile Perovskite‐Based Photomemory with a Multilevel Memory Behavior , 2017, Advanced materials.

[156]  A. Salleo,et al.  Optically switchable transistors by simple incorporation of photochromic systems into small-molecule semiconducting matrices , 2015, Nature Communications.

[157]  Sungho Kim,et al.  Experimental demonstration of a second-order memristor and its ability to biorealistically implement synaptic plasticity. , 2015, Nano letters.

[158]  Gvido Bratina,et al.  Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend. , 2016, Nature nanotechnology.

[159]  Yichun Liu,et al.  Complementary Resistive Switching Observed in Graphene Oxide-Based Memory Device , 2018, IEEE Electron Device Letters.

[160]  P. Tzeng,et al.  Charge-Trapping-Type Flash Memory Device With Stacked High- $k$ Charge-Trapping Layer , 2009, IEEE Electron Device Letters.

[161]  F. Zeng,et al.  Recent progress in resistive random access memories: Materials, switching mechanisms, and performance , 2014 .

[162]  C. Kim,et al.  Solution-processed carbon nanotube thin-film complementary static random access memory. , 2015, Nature nanotechnology.

[163]  Dongyun Chen,et al.  Multilevel Conductance Switching of a Memory Device Induced by Enhanced Intermolecular Charge Transfer , 2015, Advanced materials.

[164]  Kailash Gopalakrishnan,et al.  Overview of candidate device technologies for storage-class memory , 2008, IBM J. Res. Dev..

[165]  I. Kang,et al.  Flexible Crossbar‐Structured Phase Change Memory Array via Mo‐Based Interfacial Physical Lift‐Off , 2018, Advanced Functional Materials.

[166]  Hangbing Lv,et al.  Thermal crosstalk in 3-dimensional RRAM crossbar array , 2015, Scientific Reports.

[167]  Xiaodong Chen,et al.  Mediating Short‐Term Plasticity in an Artificial Memristive Synapse by the Orientation of Silica Mesopores , 2018, Advanced materials.

[168]  Chun‐Hu Cheng,et al.  Experimental Observation of Negative Capacitance Switching Behavior in One‐Transistor Ferroelectric Versatile Memory , 2017 .

[169]  N. S. Das,et al.  Flexible, transparent resistive switching device based on topological insulator Bi2Se3-organic composite , 2018, Journal of Applied Physics.

[170]  Jang‐Sik Lee,et al.  Control of Gold Nanoparticle–Protein Aggregates in Albumen Matrix for Configurable Switching Devices , 2018 .

[171]  J. Grote,et al.  Non-volatile resistive memory devices based on solution-processed natural DNA biomaterial , 2018 .

[172]  Hong-Sik Kim,et al.  Wafer-scale production of vertical SnS multilayers for high-performing photoelectric devices. , 2017, Nanoscale.

[173]  Su‐Ting Han,et al.  Towards the Development of Flexible Non‐Volatile Memories , 2013, Advanced materials.

[174]  H. Wong,et al.  Cost-effective, transfer-free, flexible resistive random access memory using laser-scribed reduced graphene oxide patterning technology. , 2014, Nano letters.

[175]  C. Adachi,et al.  Highly efficient organic light-emitting diodes by delayed fluorescence , 2013 .

[176]  Yong-Young Noh,et al.  Controllable Shifts in Threshold Voltage of Top‐Gate Polymer Field‐Effect Transistors for Applications in Organic Nano Floating Gate Memory , 2010 .

[177]  R. H. Kim,et al.  Non-Volatile ReRAM Devices Based on Self-Assembled Multilayers of Modified Graphene Oxide 2D Nanosheets. , 2016, Small.

[178]  Youyong Li,et al.  Programmable Negative Differential Resistance Effects Based on Self‐Assembled Au@PPy Core–Shell Nanoparticle Arrays , 2018, Advanced materials.

[179]  Jen‐Sue Chen,et al.  Ultrahigh on/off -Current Ratio for Resistive Memory Devices With Poly(N-Vinylcarbazole)/Poly(3, 4-Ethylenedioxythiophene)–Poly(Styrenesulfonate) Stacking Bilayer , 2011, IEEE Electron Device Letters.

[180]  V. Subramanian,et al.  Resistance Switching Characteristics of Solid Electrolyte Chalcogenide Ag2Se Nanoparticles for Flexible Nonvolatile Memory Applications , 2012, Advanced materials.

[181]  Kinam Kim,et al.  Charge-trapping device structure of SiO2∕SiN∕high-k dielectric Al2O3 for high-density flash memory , 2005 .

[182]  Sangsig Kim,et al.  Resistance switching memory devices constructed on plastic with solution-processed titanium oxide , 2009 .

[183]  P. Chan,et al.  A High‐Performance Optical Memory Array Based on Inhomogeneity of Organic Semiconductors , 2018, Advanced materials.

[184]  R. H. Kim,et al.  Flexible Nonvolatile Transistor Memory with Solution-Processed Transition Metal Dichalcogenides. , 2017, Small.

[185]  A. Ciesielski,et al.  Graphene via sonication assisted liquid-phase exfoliation. , 2014, Chemical Society reviews.

[186]  Yang Chai,et al.  Low‐Voltage, Optoelectronic CH3NH3PbI3−xClx Memory with Integrated Sensing and Logic Operations , 2018 .

[187]  Shinhyun Choi,et al.  Comprehensive physical model of dynamic resistive switching in an oxide memristor. , 2014, ACS nano.

[188]  Jun Koyama,et al.  Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor , 2012, IEEE Journal of Solid-State Circuits.

[189]  Qi Liu,et al.  In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory , 2013 .

[190]  Umesh Chand,et al.  Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer , 2017 .

[191]  Chung Lam,et al.  Self‐Healing of a Confined Phase Change Memory Device with a Metallic Surfactant Layer , 2018, Advanced materials.

[192]  V. Yam,et al.  Triindole-Tris-Alkynyl-Bridged Trinuclear Gold(I) Complexes for Cooperative Supramolecular Self-Assembly and Small-Molecule Solution-Processable Resistive Memories. , 2017, ACS applied materials & interfaces.

[193]  Miaoqiang Lyu,et al.  Bifunctional resistive switching behavior in an organolead halide perovskite based Ag/CH3NH3PbI3−xClx/FTO structure , 2016 .

[194]  Aitian Chen,et al.  Light‐Responsive Ion‐Redistribution‐Induced Resistive Switching in Hybrid Perovskite Schottky Junctions , 2017 .

[195]  Zhibin Yu,et al.  Single‐Layer Light‐Emitting Diodes Using Organometal Halide Perovskite/Poly(ethylene oxide) Composite Thin Films , 2015, Advanced materials.

[196]  Roberto Bez,et al.  Introduction to flash memory , 2003, Proc. IEEE.

[197]  R. Hayakawa,et al.  Recent progress in photoactive organic field-effect transistors , 2014, Science and technology of advanced materials.

[198]  Weiguang Xie,et al.  Graphene Based Non‐Volatile Memory Devices , 2014, Advanced materials.

[199]  Jai Kyeong Kim,et al.  Highly Improved Switching Properties in Flexible Aluminum Oxide Resistive Memories Based on a Multilayer Device Structure , 2018, Advanced Electronic Materials.

[200]  Yi Ren,et al.  Toward non-volatile photonic memory: concept, material and design , 2018 .

[201]  Dongyun Chen,et al.  Ternary Flexible Electro-resistive Memory Device based on Small Molecules. , 2016, Chemistry, an Asian journal.

[202]  Tung-Sheng Chen,et al.  Performance improvement of SONOS memory by bandgap engineering of charge-trapping layer , 2004 .

[203]  Qi Liu,et al.  Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM , 2012, Advanced materials.

[204]  A. Ranjan,et al.  Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films , 2018, Scientific Reports.

[205]  O. Richard,et al.  Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory. , 2015, Nano letters.

[206]  Investigation of Time–Dependent Resistive Switching Behaviors of Unipolar Nonvolatile Organic Memory Devices , 2018, Advanced Functional Materials.

[207]  A. Wee,et al.  2D Phosphorene: Epitaxial Growth and Interface Engineering for Electronic Devices , 2018, Advanced materials.

[208]  Fei Zeng,et al.  Conductance quantization in a Ag filament-based polymer resistive memory , 2013, Nanotechnology.

[209]  Tailiang Guo,et al.  Efficient tristable resistive memory based on single layer graphene/insulating polymer multi-stacking layer , 2014 .

[210]  Huaxiang Yin,et al.  Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory , 2008, IEEE Transactions on Electron Devices.

[211]  Shuangchen Ruan,et al.  Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics , 2017, Advanced science.

[212]  Shimeng Yu,et al.  Metal–Oxide RRAM , 2012, Proceedings of the IEEE.

[213]  Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer , 2013 .

[214]  Qi Liu,et al.  Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications , 2010, IEEE Electron Device Letters.

[215]  Satoshi Kawata,et al.  Three-Dimensional Optical Data Storage Using Photochromic Materials. , 2000, Chemical reviews.

[216]  A. Torres,et al.  MOHOS-type memory performance using HfO2 nanoparticles as charge trapping layer and low temperature annealing , 2012 .

[217]  Su‐Ting Han,et al.  Synergies of Electrochemical Metallization and Valance Change in All‐Inorganic Perovskite Quantum Dots for Resistive Switching , 2018, Advanced materials.

[218]  S. Yuasa,et al.  Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited) , 2014 .