Single-mode proton-implanted photonic crystal VCSELs

Photonic crystals are etched to a variety of depths in the top mirror of proton-implanted vertical-cavity surface-emitting laser (VCSEL) diodes to achieve single-fundamental-mode operation. To investigate both the index confinement provided by the etched pattern and its effect on optical loss, continuous-wave experiments are performed. It is shown that proper pattern design leads to improved fundamental-mode output power, decreased threshold, and increased efficiency relative to unetched, but otherwise identical implant VCSELs. These improvements indicate a significant reduction in diffraction loss to the fundamental mode due to the index guiding provided by the etched pattern. Etching to shallow depths provides the ability to scale to large aperture sizes while etching deeply allows single-mode emission of small diameter devices. The photonic crystal designs are then used in the fabrication of high-speed implant-confined VCSELs with coplanar contacts on polyimide. Optimized devices exhibit a record 15 GHz small-signal modulation bandwidth.

[1]  N. Dutta,et al.  Anomalous temporal response of gain guided surface emitting lasers , 1991 .

[2]  N. Dutta,et al.  Performance of gain-guided surface emitting lasers with semiconductor distributed Bragg reflectors , 1991 .

[3]  Kent D. Choquette,et al.  High-frequency modulation of oxide- confined vertical cavity surface emitting lasers , 1996 .

[4]  K. Choquette,et al.  Index guiding dependent effects in implant and oxide confined vertical-cavity lasers , 1996, IEEE Photonics Technology Letters.

[5]  Rainer Michalzik,et al.  4.8 mW singlemode oxide confined top-surface emitting vertical-cavity laser diodes , 1997 .

[6]  B. E. Hammons,et al.  Small and large signal modulation of 850 nm oxide-confined verticai-cavity surface-emitting lasers , 1997, CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics.

[7]  James K. Guenter,et al.  Reliability of various size oxide aperture VCSELs , 2002, 52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345).

[8]  Kent D. Choquette,et al.  Etching depth dependence of the effective refractive index in two-dimensional photonic-crystal-patterned vertical-cavity surface-emitting laser structures , 2003 .

[9]  A. N. Al-Omari,et al.  Polyimide-planarized vertical-cavity surface-emitting lasers with 17.0-GHz bandwidth , 2004, IEEE Photonics Technology Letters.

[10]  Jesper Berggren,et al.  Fabrication and performance of 1.3-μm vertical-cavity surface-emitting lasers with InGaAs quantum well active regions grown on GaAs substrates , 2004, SPIE Photonics Europe.

[11]  P. Leisher,et al.  Proton implanted single mode holey vertical-cavity surface-emitting lasers , 2005, 2005 IEEE LEOS Annual Meeting Conference Proceedings.

[12]  Kent D. Choquette,et al.  Single mode photonic crystal vertical cavity lasers , 2006 .

[13]  P. Leisher,et al.  Loss and Index Guiding in Single-Mode Proton-Implanted Holey Vertical-Cavity Surface-Emitting Lasers , 2006, IEEE Journal of Quantum Electronics.

[14]  P. Leisher,et al.  Etch damage and deposition repair of vertical-cavity surface-emitting lasers , 2006 .