论文信息 - Erratum: “Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy” [Appl. Phys. Lett. 117, 051601 (2020)] - 字舞流文

Erratum: “Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy” [Appl. Phys. Lett. 117, 051601 (2020)]

Xiaojuan Sun | Dabing Li | H. Zang | Ke Jiang | Jianwei Ben | Yuping Jia | Yang Chen | Shanli Zhang | Wei Lü | Z. Shi

[1] Xiaojuan Sun,et al. Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy , 2020 .