Chapter 12 Other Materials: Status and Prospects

This chapter reviews recent research on “new” materials—that is, those materials that have promise based on known or anticipated physical and electronic properties but have not yet been proven suitable for use as detector materials. Data reported in the literature that are relevant to nuclear radiation detection applications are tabulated and compared, and an assessment of potential future progress is made. Semiconductor nuclear detectors have been used for decades but are experiencing a dramatic increase in interest now. This increase is due partly to the availability of better quality materials and advances in semiconductor processing technology that make possible the fabrication of new and better device structures. One of the most important factors that have stimulated interest in semiconductor detectors is the availability of powerful and relatively inexpensive computers and electronic circuitry for powering and reading out semiconductor devices. All of these advances have had a direct effect on the desire to identify and develop new materials to solve problems that cannot be solved using the three “traditional” semiconductor detector materials: silicon, germanium, and cadmium telluride.

[1]  W. A. Gutierrez,et al.  Cadmium Selenide Thin Film Field Effect Transistors , 1965 .

[2]  A. Burger,et al.  The Ternary Cd0.7Zn0.3Se Compound, a Novel Room Temperature X-Ray Detector , 1985, IEEE Transactions on Nuclear Science.

[3]  Y. Nagashima,et al.  An indium phosphide solid state detector A possible low energy gamma and neutrino detector , 1989 .

[4]  A. Hojo,et al.  Fe-Doped High Purity GaAs as a Room Temperature Gamma-Ray Spectrometric Detector , 1976, IEEE Transactions on Nuclear Science.

[5]  J. Lund,et al.  Lead iodide nuclear spectrometers , 1988 .

[6]  M. D. Pocha,et al.  Neutron-treated, ultrafast, photoconductor detectors , 1989 .

[7]  P. Siffert Current possibilities and limitations of cadmium telluride detectors , 1978 .

[8]  R. Bell,et al.  Bi2S3 as a high Z material for γ-ray detectors , 1975, IEEE Transactions on Nuclear Science.

[9]  J. Wolfe,et al.  Xeroradiography of the breast: overview of 21,057 consecutive cases. , 1987, Radiology.

[10]  V. Kononenko,et al.  Photosensitivity of metal-semiconductor structures based on zinc telluride , 1978 .

[11]  C. W. Hatfield,et al.  High-temperature Schottky diodes with thin-film diamond base , 1990, IEEE Electron Device Letters.

[12]  Masafumi Watari,et al.  Preparation and characteristics of the TlBr‐TlI fiber for a high power CO2 laser beam , 1986 .

[13]  D. Stevenson,et al.  Electrical transport and defect levels in ZnTe crystals , 1973 .

[14]  Jick H. Yee,et al.  What Can Be Expected from High-Z Semiconductor Detectors? , 1976, IEEE Transactions on Nuclear Science.

[15]  W. R. Nelson,et al.  Evaluation of elemental and compound semiconductors for x-ray digital radiography , 1991 .

[16]  U. Prechtel,et al.  LOW CAPACITY DRIFT DIODE , 1987 .

[17]  Franz Schäfers,et al.  Schottky type photodiodes as detectors in the VUV and soft x-ray range. , 1988, Applied optics.

[18]  R. D. Ryan,et al.  Evaluation of epitaxial n-GaAs for nuclear radiation detection , 1971 .

[19]  L. Vasanelli,et al.  A particular application of GaSe semiconductor detectors in the neutrino experiment at CERN , 1975 .

[20]  Kanai S. Shah,et al.  Thallium bromide radiation detectors , 1989 .

[21]  E. A. Konorova,et al.  Diamond dosimeter for x-ray and δ-radiation , 1977, IEEE Transactions on Nuclear Science.

[22]  K. Smith,et al.  GaAs revisited as a room temperature X-ray detector , 1992 .

[23]  Robert G. Waggener,et al.  Handbook of medical physics , 1982 .

[24]  A. Calster Fabrication processes for the thin film transistor , 1985 .

[25]  J. M. Markakis,et al.  Mercuric iodide photodetector-cesium iodide scintillator gamma ray spectrometers , 1988 .

[26]  K. Shah,et al.  Stabilization of HgI2 X-ray detectors , 1990 .

[27]  R. Hofstadter,et al.  Behavior of thallium bromide conduction counters , 1987 .

[28]  P. N. Keating,et al.  Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond Structure , 1966 .

[29]  M. Luqman,et al.  Ohmic contacts to zinc telluride and their high temperature behavior , 1987 .

[30]  Victor Perez-Mendez,et al.  Amorphous silicon pixel layers with cesium iodide converters for medical radiography , 1994 .

[31]  Kanai S. Shah,et al.  InI photodetectors for scintillation spectroscopy , 1992, Optics & Photonics.

[32]  T. Economou,et al.  Performance and durability of HgI/sub 2/ X-ray detectors for space missions , 1989 .

[33]  J. F. Butler,et al.  Recent developments in CdZnTe gamma-ray detector technology , 1992, Optics & Photonics.

[34]  Y. Ishizawa,et al.  Preparation of single crystals of YB66 , 1985 .

[35]  Y. Kumashiro,et al.  Thermal neutron irradiation experiments on 10BP single-crystal wafers☆ , 1988 .

[36]  F. Faccio,et al.  Study and realization of an amorphous silicon X-ray detector with effective energy sensitivity , 1992 .

[37]  R. D. Ryan,et al.  HIGH-RESOLUTION NUCLEAR RADIATION DETECTORS FROM EPITAXIAL n-GaAs. , 1970 .

[38]  R. Glang,et al.  Handbook of Thin Film Technology , 1970 .

[39]  A. Burger,et al.  Growth of medium electrical resistivity CdSe single crystals by the temperature gradient solution zoning technique , 1984 .

[40]  L. Vasanelli,et al.  GaSe as nuclear particle detector , 1974 .

[41]  G. Entine,et al.  Properties of lead iodide semiconductor radiation detectors , 1989 .

[42]  Marc Cuzin,et al.  Some new developments in the field of high atomic number materials , 1987 .

[43]  C. Tatsuyama,et al.  Average energy needed to produce an electron-hole pair in GaSe nuclear particle detectors , 1988 .

[44]  Larry E. Antonuk,et al.  Development of hydrogenated amorphous silicon sensors for high energy photon radiotherapy imaging , 1990 .

[45]  T. Schlesinger,et al.  Semiconductors for room temperature nuclear detector applications , 1995 .

[46]  A. Burger,et al.  Improved Spectrometer Performance of Cadmium Selenide Room Temperature Gamma-Ray Detector , 1986, IEEE Transactions on Nuclear Science.

[47]  G. Hall Silicon drift chambers , 1988 .

[48]  G. Entine,et al.  Crystal growth of CdTe for γ-ray detectors , 1978 .

[49]  J. Palmour,et al.  Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide , 1988 .

[50]  Eiji Sakai,et al.  Present status of room temperature semiconductor detectors , 1982 .

[51]  W. Brown,et al.  Stable ohmic contacts to Zinc Telluride , 1987 .

[52]  J. Vanfleteren,et al.  High-voltage polycrystalline CdSe thin-film transistors , 1990 .

[53]  Y. Kumashiro,et al.  Schottky barrier diodes using thick, well‐characterized boron phosphide wafers , 1985 .

[54]  Kanai S. Shah,et al.  Recent developments in the search for new semiconductor gamma-ray detector materials , 1992, Optics & Photonics.

[55]  S. Nelson,et al.  Radiation imaging with 2D a-Si sensor arrays , 1991, Conference Record of the 1991 IEEE Nuclear Science Symposium and Medical Imaging Conference.

[56]  K. Segall,et al.  Diamond film optical X-ray and particle detectors , 1990 .

[57]  A. Burger,et al.  Temperature gradient solution zoning growth and characterization of ZnxCd1−xSe single crystals , 1984 .

[58]  T. Sugita,et al.  Performance of GaAs Surface-Barrier Detectors Made from High-Purity Gallium Arsenide , 1972 .

[59]  C. Tatsuyama,et al.  GaSe nuclear particle detectors , 1989 .

[60]  H. S. Gutowsky Techniques in Chemistry , 1966 .

[61]  Kanai S. Shah,et al.  Characterization of thallium bromide nuclear detectors , 1990 .

[62]  J. Yee,et al.  ALSB as a High-Energy Photon Detector , 1977, IEEE Transactions on Nuclear Science.

[63]  F. P. Doty,et al.  Cd/sub 1-x/Zn/sub x/Te gamma ray detectors , 1992 .

[64]  J. Lund,et al.  Indium phosphide particle detectors , 1989 .

[65]  B. Equer Thin-film semiconductors: new materials for future detectors , 1992 .

[66]  Victor Perez-Mendez,et al.  Improved charge collection of the buried p-i-n- a-Si:H radiation , 1990 .

[67]  V. Perez-Mendez,et al.  Detection of Charged Particles in Amorphous Silicon Layers , 1986, IEEE Transactions on Nuclear Science.

[68]  S. P. Beaumont,et al.  GaAs solid state detectors for particle physics , 1992 .

[69]  H. A. Lamonds Review of mercuric iodide development program in Santa Barbara , 1983 .

[70]  Richard L. Weisfield,et al.  Characteristics of a-Si Pixel Arrays for Radiation Imaging , 1991 .

[71]  Y. Naruse,et al.  Metal/amorphous silicon multilayer radiation detectors , 1989 .

[72]  S. Roe,et al.  Silicon drift photodiodes , 1990 .

[73]  Arthur G. Haus,et al.  The Physics of Medical Imaging: Recording System Measurements and Techniques , 1979 .

[74]  G. Knoll,et al.  Bulk GaAs room temperature radiation detectors , 1992 .

[75]  R. Street,et al.  Signal generation in a hydrogenerated amorphous silicon detector , 1989 .

[76]  Robert A. Street,et al.  Amorphous Silicon Electronics , 1992 .

[77]  Kanai S. Shah,et al.  Thallium bromide semiconductor X-ray and γ-ray detectors , 1992 .

[78]  J. Iwanczyk,et al.  Mercuric iodide (HgI2) platelets for x-ray spectroscopy produced by polymer controlled growth , 1980 .

[79]  W. Moses,et al.  TlBr/sub x/I/sub 1-x/ photodetectors for scintillation spectroscopy , 1994 .

[80]  J. Ludwig,et al.  X-ray detectors based on semi-insulating GaAs substrate , 1992 .

[81]  P. Siffert,et al.  Preparation and Characteristics of Natural Diamond Nuclear Radiation Detectors , 1975, IEEE Transactions on Nuclear Science.

[82]  Pavel Rehak,et al.  SILICON DRIFT CHAMBERS - FIRST RESULTS AND OPTIMUM PROCESSING OF SIGNALS , 1984 .

[83]  D. Moses,et al.  Ultraviolet photoresponse characteristics of diamond diodes. , 1991, Applied optics.

[84]  V. Perez-Mendez,et al.  Amorphous silicon position sensitive neutron detector , 1991, Conference Record of the 1991 IEEE Nuclear Science Symposium and Medical Imaging Conference.

[85]  Francesco Fiori,et al.  A preliminary study of GaAs solid-state detectors for high-energy physics , 1990 .

[86]  L. B. Schein,et al.  Electrophotography and Development Physics , 1988 .

[87]  M. Bruder,et al.  Vertical Bridgman growth of Cd1−yZnyTe and characterization of substrates for use in Hg1−xCdxTe liquids phase epitaxy , 1990 .

[88]  N. Ahmad,et al.  Study of boron nitride thin films for ultraviolet-sensor applications , 1989 .

[89]  R. Raghavan Inverse. beta. decay of /sup 115/In. -->. /sup 115/Sn*: A new possibility for detecting solar neutrinos from the proton-proton reaction , 1976 .

[90]  J. Lund,et al.  Indium phosphide particle detectors for low energy solar neutrino spectroscopy , 1988 .

[91]  Koichi Kobayashi,et al.  Magneto-reflectance of excitons in indium halides , 1984 .

[92]  Kanai S. Shah,et al.  Charge carrier transport properties in thallium bromide crystals used as radiation detectors , 1990 .

[93]  Noise in a-Si:H p-i-n detector diodes , 1991, Conference Record of the 1991 IEEE Nuclear Science Symposium and Medical Imaging Conference.

[94]  G. Pfister New aspects of electronic properties of amorphous selenium and its use in xerography , 1979 .

[95]  A. Burger,et al.  Transient Charge Technique Investigation of HgI2 and CdSe Nuclear Detectors , 1987, IEEE Transactions on Nuclear Science.