A novel pressure sensor structure for integrated sensors

Abstract A novel pressure sensor ‘silicon box’ structure is proposed, fabricated by one-sided processing technology. Tests and analyses show that, while the excellent performance of single crystal silicon diaphragm sensors is maintained, the new technique has advantages for both discrete and integrated pressure sensors of high yield, good uniformity, low cost and feasibility of mass production. This structure also provides some reduction of thermal stress caused by the mismatch between the chip and the substrate occurring in a silicon cup structure.