Critical dimension control method and semiconductor manufacturing lines that support them in the semiconductor production process

Critical dimension control method in a semiconductor production process is intermittent and determining whether the model to perform the production process, the method comprising: applying a common offset of the model-specific offset or model group according to the determination, the model-specific offset or the model group step of applying the process parameters with the common offset to perform the production process, and a step of measuring the actual critical dimension in the production process, the model-specific offset based on the actual critical dimension is calculated, and the calculated the model-specific offset applied to the calculation of the common offset of the model group. Even if each perform a number of models are continuous or intermittent production process having a critical dimension of a different target, reflecting the previous process variation to obtain optimum process conditions, to minimize the error between the critical dimension arising in the production restart early it is possible to reduce the time and cost.