A 300 V thin layer SOI nLDMOS based on RESURF and MFP

A 300 V thin layer SOI nLDMOS based on reduced surface electric field (RESURF) and multiple field plates (MFP) is proposed in this paper. RESURF principle and MFP technology are adopted to modulate the electric field distribution and improve the breakdown voltage (BV). Device structure parameters are discussed to achieve a trade-off between breakdown voltage and on-resistance. Compared with conventional structures, the achieved 300 V nLDMOS not only owns high BV, but also possesses a simple manufacturing process and a low cost.