论文信息 - Low ohmic-contact resistance in recessed-gate normally-off AlGaN/GaN MIS-HEMT with δ-doped GaN Cap Layer - 字舞流文

Low ohmic-contact resistance in recessed-gate normally-off AlGaN/GaN MIS-HEMT with δ-doped GaN Cap Layer

K. Inoue | T. Egawa | A. Wakejima | A. Ando | N. Kato | Y. Osada | R. Kamimura | A. Watanabe | T. Kubo | T. Nagai