Analysis of surface recombination in nanowire array solar cells

In this work, microscopic three-dimensional (3D) simulations were performed on nanowire array solar cells to study the impact of surface recombination on the photovoltaic performance. Both axially and radially arranged p-n junction in III-V based structures were taken into consideration. From the cases with surface recombination velocity varying from 1e3cm/s to 1e6cm/s, the core-shell nanowire was found to provide better tolerance for surface recombination. The difference of surface recombination within the axial and core-shell structures is explained by analyzing the relevent minority carrier density, followed by a discussion on the impact of surface recombination on the performance of nanowires as photovoltaic devices.

[1]  Bernd Witzigmann,et al.  Computational electromagnetics for nanowire solar cells , 2012 .

[2]  B. Witzigmann,et al.  Efficiency Analysis of III–V Axial and Core–Shell Nanowire Solar Cells , 2012 .

[3]  Z. Mi,et al.  InN p-i-n Nanowire Solar Cells on Si , 2011, IEEE Journal of Selected Topics in Quantum Electronics.

[4]  Ali Javey,et al.  Dramatic reduction of surface recombination by in situ surface passivation of silicon nanowires. , 2011, Nano letters.

[5]  Yi Cui,et al.  Design and growth of III–V nanowire solar cell arrays on low cost substrates , 2010, 2010 35th IEEE Photovoltaic Specialists Conference.

[6]  Bernd Witzigmann,et al.  Computational study of an InGaN/GaN nanocolumn light-emitting diode , 2010 .

[7]  L. Worschech,et al.  Time-resolved photoluminescence investigations on HfO2-capped InP nanowires , 2010, Nanotechnology.

[8]  Peidong Yang,et al.  Light trapping in silicon nanowire solar cells. , 2010, Nano letters.

[9]  B. Witzigmann,et al.  Dispersion, wave propagation and efficiency analysis of nanowire solar cells. , 2009, Optics express.

[10]  T. Fukui,et al.  Growth of Core–Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy , 2009 .

[11]  Bernd Witzigmann,et al.  Unified simulation of transport and luminescence in optoelectronic nanostructures , 2008 .

[12]  Peng Wang,et al.  High-resolution detection of Au catalyst atoms in Si nanowires. , 2008, Nature nanotechnology.

[13]  Gang Chen,et al.  Analysis of optical absorption in silicon nanowire arrays for photovoltaic applications. , 2007, Nano letters.

[14]  Shadi A Dayeh,et al.  III-V nanowire growth mechanism: V/III ratio and temperature effects. , 2007, Nano letters.

[15]  P. Yang.  Nanowire Photonics , 2007, 2007 International Nano-Optoelectronics Workshop.

[16]  Lars Samuelson,et al.  Epitaxial III-V nanowires on silicon , 2004 .

[17]  J. Nelson.  The physics of solar cells , 2003 .

[18]  M. Henini,et al.  Physics of optoelectronic devices , 1997 .

[19]  Darling.  Defect-state occupation, Fermi-level pinning, and illumination effects on free semiconductor surfaces. , 1991, Physical review. B, Condensed matter.

[20]  Sorab K. Ghandhi,et al.  Surface recombination velocity and lifetime in InP , 1991 .

[21]  H. Queisser,et al.  Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells , 1961 .