论文信息 - Investigation of reverse short-channel effect with numerical and compact models

Investigation of reverse short-channel effect with numerical and compact models

In this paper, a physically based reverse short channel effect (RSCE) threshold voltage compact model is investigated and compared with numerical simulation. A new method to predict RSCE using the compact model is given, which is supported by the TCAD data. A wide range of Vth predictions of nchannel MOSFETs with pile-up structures is conducted. Good prediction results are achieved between the RSCE compact model and TCAD data. The results further support the physics-based RSCE mode, which is useful for both circuit simulation and technology development as well as device design.

Xing Zhou | K. Y. Lim | Wensheng Qian | Yuwen Wang

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