论文信息 - Atomic and electronic structure of misfit dislocations in GaSb/GaAs(0 0 1) - 字舞流文

Atomic and electronic structure of misfit dislocations in GaSb/GaAs(0 0 1)

K. Shiraishi | K. Takeda | T. Ito | T. Shinoda | Ken-ichi Suzuki | T. Kaneko | Nori Miyagishima

[1] K. Shiraishi,et al. Energetics in the growth mechanism of semiconductor heteroepitaxy , 2002 .

[2] Hiroshi Yamaguchi,et al. Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A , 1997 .

[3] L. Lassabatère,et al. Accommodation of lattice mismatch and threading of dislocations in GaSb films grown at different temperatures on GaAs (001) , 1994 .

[4] Leonard Kleinman,et al. Efficacious Form for Model Pseudopotentials , 1982 .

[5] W. Kohn,et al. Self-Consistent Equations Including Exchange and Correlation Effects , 1965 .

[6] P. Hohenberg,et al. Inhomogeneous Electron Gas , 1964 .

[7] P. Fuoss,et al. X-Ray Diffraction From Buried GaAs/GaSb Interfaces , 1990 .